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Электронный компонент: XN06501

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Publication date: August 2003
SJJ00108BED
Composite Transistors
XN06501
(XN6501)
Silicon NPN epitaxial planar type
For general amplification
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
Basic Part Number
2SD0601A (2SD601A) 2
Absolute Maximum Ratings T
a
= 25C
Unit: mm
Internal Connection
Marking Symbol: 5N
5
4
3
2
1
6
Tr2
Tr1
Note) The part number in the parenthesis shows conventional part number.
Electrical Characteristics T
a
= 25C 3C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Emitter-base voltage (Collector open)
V
EBO
7
V
Collector current
I
C
100
mA
Peak collector current
I
CP
200
mA
Total power dissipation
P
T
300
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 A, I
E
= 0
60
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 2 mA, I
B
= 0
50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 A, I
C
= 0
7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 20 V, I
E
= 0
0.1
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 10 V, I
B
= 0
100
A
Forward current transfer ratio
h
FE
V
CE
= 10 V, I
C
= 2 mA
160
460
h
FE
ratio
*
h
FE(Small/
V
CE
= 10 V, I
C
= 2 mA
0.50
0.99
Large)
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 100 mA, I
B
= 10 mA
0.1
0.3
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= -2 mA, f = 200 MHz
150
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
3.5
pF
(Common base, input open circuited)
1: Collector (Tr1)
4: Base (Tr2)
2: Base (Tr1)
5: Emitter (Tr2)
3: Collector (Tr2)
6: Emitter (Tr1)
EIAJ: SC-74
Mini6-G1 Package
2.90
1.9
0.1
0.16
+0.10
0.06
2.8
+0.2 0.3
1.1
+0.3 0.1
1.1
0 to 0.1
+0.2 0.1
1.50
0.65
0.15
0.4
0.2
+0.25 0.05
(0.95)
0.30
+0.10
0.05
0.50
+0.10
0.05
(0.95)
6
5
4
1
3
2
+0.20
0.05
5
10
XN06501
2
SJJ00108BED
I
B
V
BE
I
C
V
BE
V
CE(sat)
I
C
P
T
T
a
I
C
V
CE
I
C
I
B
h
FE
I
C
f
T
I
E
NV
I
C
0
160
40
120
80
0
500
200
400
100
300
Total power dissipation
P
T
(mW
)
Ambient temperature T
a
(
C)
0
0
10
2
4
8
6
60
50
40
30
20
10
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
T
a
= 25C
I
B
= 160 A
140
A
120
A
100
A
80
A
60
A
40
A
20
A
0
0
1.0
0.8
0.6
0.4
0.2
240
200
160
120
80
40
Base current I
B
(mA)
Collector current I
C
(mA
)
V
CE
= 10 V
T
a
= 25C
0
0
1.0
0.8
0.6
0.4
0.2
1.2
1.0
0.8
0.6
0.4
0.2
Base-emitter voltage V
BE
(V)
Base current I
B
(m
A
)
V
CE
= 10 V
T
a
= 25C
0
0
2.0
1.6
1.2
0.8
0.4
240
200
160
120
80
40
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA
)
V
CE
= 10 V
T
a
= 75C
-25C
25
C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
10
-2
10
-1
10
-1
1
10
10
2
1
10
10
2
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
600
500
400
300
200
100
Forward current transfer ratio h
FE
Collector current I
C
(mA)
10
-1
1
10
10
2
V
CE
= 10 V
T
a
= 75C
25
C
-25C
0
300
240
180
120
60
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
-10
-1
1
10
10
2
V
CB
= 10 V
T
a
= 25C
0
240
200
160
120
80
40
Noise voltage NV
(mV
)
Collector current I
C
(
A)
10
10
2
10
3
V
CE
= 10 V
G
V
= 80 dB
Function
= FLAT
T
a
= 25C
4.7 k
R
g
= 100 k
22 k
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2002 JUL