1
Publication date: June 2002
SJJ00264AED
Composite Transistors
Parameter
Symbol
Rating
Unit
Rating
Collector to base voltage
V
CBO
25
V
of
Collector to emitter voltage
V
CEO
20
V
element
Emitter to base voltage
V
EBO
12
V
Collector current
I
C
0.5
A
Peak collector current
I
CP
1
A
Total
Total power dissipation
P
T
300
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
XN01558
Silicon NPN epitaxial planar transistor
For low-frequency amplification
Features
Two elements incorporated into one package (Emitter-coupled
transistors)
Reduction of the mounting area and assembly cost by one half
Basic Part Number of Element
2SD2623 2 elements
1: Collector (Tr1)
4: Emitter
2: Collector (Tr2)
5: Base (Tr1)
3: Base (Tr2)
EIAJ: SC-74A
Mini5-G1 Package
Unit: mm
Absolute Maximum Ratings T
a
= 25C
2.90
1.9
0.1
0.16
+0.10
0.06
2.8
+0.2 0.3
1.1
+0.3 0.1
1.1
0 to 0.1
+0.2 0.1
1.50
(0.65)
0.4
0.2
+0.25 0.05
(0.95) (0.95)
0.30
+0.10
0.05
5
4
3
1
2
+0.20
0.05
5
10
1
5
Tr2
Tr1
2
3
4
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector to base voltage
V
CBO
I
C
= 10 A, I
E
= 0
25
V
Collector to emitter voltage
V
CEO
I
C
= 1 mA, I
B
= 0
20
V
Emitter to base voltage
V
EBO
I
C
= 10 A, I
C
= 0
12
V
Collector cutoff current
I
CBO
V
CB
= 25 V, I
E
= 0
100
nA
Forward current transfer ratio
*1
h
FE
V
CE
= 2 V, I
C
= 0.5 A
200
800
h
FE
ratio
*1, 2
h
FE(Small/Large)
V
CE
= 2 V, I
C
= 0.5 A
0.5
0.99
Collector to emitter saturation voltage
*1
V
CE(sat)
I
C
= 0.5 A, I
B
= 20 mA
0.14
0.4
V
Base to emitter saturation voltage
*1
V
BE(sat)
I
C
= 0.5 A, I
B
= 50 mA
1.2
V
Gain bandwidth product
f
T
V
CB
= 10 V, I
E
= -50 mA, f = 200 MHz
200
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
10
pF
On resistance
*3
R
on
1.0
Electrical Characteristics T
a
= 25C 3C
Internal Connection
Marking Symbol: 4Z
V
V
1 k
R
on
=
V
B
1 000
()
V
A
- V
B
f
= 1 kHz
V
= 0.3 V
V
B
I
B
= 1 mA
V
A
Note) *1: Pulse measurement
*2: Ratio between one and another device
*3: R
on
start resistance test circuit
XN01558
2
SJJ00264AED
V
BE(sat)
I
C
h
FE
I
C
C
ob
V
CB
P
T
T
a
I
C
V
CE
V
CE(sat)
I
C
0
160
40
120
80
0
350
250
300
200
150
100
50
Total power dissipation P
T
(m
W
)
Ambient temperature T
a
(
C)
0
0
6
1
5
2
4
3
0.9
0.7
0.8
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.6
0.5
0.4
0.3
0.2
0.1
I
B
= 4.0 mA
1.0 mA
1.5 mA
2.0 mA
2.5 mA
3.0 mA
3.5 mA
0.5 mA
T
a
= 25C
0.001
0.01
0.1
1
1
10
1 000
100
I
C
/ I
B
= 25
0.1
T
a
= 75C
25
C
-25C
Collector to emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0.01
0.1
1
10
10
10
2
10
5
10
3
10
4
I
C
/ I
B
= 10
1
T
a
= -25C
25
C
75
C
Base to emitter saturation voltage V
BE(sat)
(V
)
Collector current I
C
(
A)
0
0.1
1
10
100
120
180
60
240
300
360
540
480
420
600
1 000
V
CE
= 2 V
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
T
a
= 75C
1
10
100
0
10
15
20
25
5
30
Collector output capacitance C
ob
(pF)
Collector to base voltage V
CB
(V)
f
= 1 MHz
T
a
= 25C
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Consult our sales staff in advance for information on the following applications:
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tice for modification and/or improvement. At the final stage of your design, purchasing, or use of the
products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum
rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise,
we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
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2002 MAY
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