1
Composite Transistors
XN4608
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For general amplification (Tr1)
For amplification of low frequency output (Tr2)
s
Features
q
Two elements incorporated into one package.
q
Reduction of the mounting area and assembly cost by one half.
s
Basic Part Number of Element
q
2SD601A+2SB970
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Marking Symbol:
5E
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
7
V
Collector current
I
C
100
mA
Peak collector current
I
CP
200
mA
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
10
V
Emitter to base voltage
V
EBO
7
V
Collector current
I
C
0.5
A
Peak collector current
I
CP
1
A
Total power dissipation
P
T
300
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
55 to +150
C
Tr1
Overall
Tr2
1 : Collector (Tr1)
4 : Collector (Tr2)
2 : Base (Tr2)
5 : Base (Tr1)
3 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC74
Mini Type Package (6pin)
2.8
+0.2
0.3
1.5
0.65
0.15
0.65
0.15
1
6
5
4
3
2
1.45
0.1
0.95
0.95
1.9
0.1
+0.25
0.05
0.3
+0.1 0.05
0.5
+0.1 0.05
2.9
+0.2 0.05
1.1
+0.2
0.1
0.8
0.4
0.2
0 to 0.05
0.16
+0.1
0.06
0.1 to 0.3
6
1
2
Tr2
Tr1
5
4
3
2
Composite Transistors
s
Electrical Characteristics
(Ta=25C)
q
Tr1
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
I
C
= 10
A, I
E
= 0
60
V
Collector to emitter voltage
V
CEO
I
C
= 2mA, I
B
= 0
50
V
Emitter to base voltage
V
EBO
I
E
= 10
A, I
C
= 0
7
V
Collector cutoff current
I
CBO
V
CB
= 20V, I
E
= 0
0.1
A
I
CEO
V
CE
= 10V, I
B
= 0
100
A
Forward current transfer ratio
h
FE
V
CE
= 10V, I
C
= 2mA
160
460
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 100mA, I
B
= 10mA
0.1
0.3
V
Transition frequency
f
T
V
CB
= 10V, I
E
= 2mA, f = 200MHz
150
MHz
Collector output capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
3.5
pF
XN4608
q
Tr2
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
I
C
= 10
A, I
E
= 0
15
V
Collector to emitter voltage
V
CEO
I
C
= 1mA, I
B
= 0
10
V
Emitter to base voltage
V
EBO
I
E
= 10
A, I
C
= 0
7
V
Collector cutoff current
I
CBO
V
CB
= 10V, I
E
= 0
0.1
A
Forward current transfer ratio
h
FE1
V
CE
= 2V, I
C
= 0.5A*
100
350
h
FE2
V
CE
= 2V, I
C
= 1A*
60
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 0.4A, I
B
= 8mA
0.16
0.3
V
Base to emitter saturation voltage
V
BE(sat)
I
C
= 0.4A, I
B
= 8mA
0.8
1.2
V
Transition frequency
f
T
V
CB
= 10V, I
E
= 50mA, f = 200MHz
130
MHz
Collector output capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
22
pF
* Pulse measurement
Common characteristics chart
P
T
-- Ta
0
100
200
300
400
500
0
40
80
120
160
Ambient temperature Ta (C)
Total power dissipation P
T
(mW
)
3
Composite Transistors
Characteristics charts of Tr1
I
C
-- V
CE
I
B
-- V
BE
I
C
-- V
BE
I
C
-- I
B
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
NV -- I
C
XN4608
0
0
10
2
4
8
6
60
50
40
30
20
10
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=160
A
140
A
120
A
100
A
80
A
60
A
40
A
20
A
0
0
1.0
0.8
0.6
0.4
0.2
1200
1000
800
600
400
200
Base to emitter voltage V
BE
(V)
Base current I
B
(
A
)
V
CE
=10V
Ta=25C
0
0
2.0
1.6
1.2
0.8
0.4
240
200
160
120
80
40
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
V
CE
=10V
Ta=75C
25C
25C
0
0
1000
800
600
400
200
240
200
160
120
80
40
Collector current I
C
(mA
)
Base current I
B
(
A)
V
CE
=10V
Ta=25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
0.1
0.3
600
500
400
300
200
100
1
3
10
30
100
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
0
0.1 0.3
300
240
180
120
60
1
3
10
30
100
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
V
CB
=10V
Ta=25C
0
10
240
200
160
120
80
40
30
100
300
1000
50
500
20
200
Noise voltage NV
(mV
)
Collector current I
C
(
A)
V
CE
=10V
G
V
=80dB
Function=FLAT
Ta=25C
4.7k
R
g
=100k
22k
4
Composite Transistors
Characteristics charts of Tr2
I
C
-- V
CE
V
BE(sat)
-- I
C
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
XN4608
0
0
6
1
5
2
4
3
1.2
1.0
0.8
0.6
0.4
0.2
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
Ta=25C
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
I
B
= 10mA
0.01
0.03
0.01 0.03
0.1
0.3
1
3
10
30
100
0.1 0.3
1
3
10
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
I
C
/I
B
=50
Ta= 25C
25C
75C
0.01
0.03
0.01 0.03
0.1
0.3
1
3
10
30
100
0.1 0.3
1
3
10
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=50
Ta=75C
25C
25C
0
0.01 0.03
600
500
400
300
200
100
0.1 0.3
1
3
10
Forward current transfer ratio h
FE
Collector current I
C
(A)
V
CE
= 2V
Ta=75C
25C
25C
1
3
10
30
100
2
20
5
50
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
0
40
80
120
200
160
V
CB
=10V
Ta=25C
0
1
80
70
60
50
40
30
20
10
3
10
30
100
2
20
5
50
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
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