1
Composite Transistors
XP04683
(XP4683)
NPN epitaxial planer transistor (Tr1)
PNP epitaxial planer transistor (Tr2)
For high-frequency amplification (Tr1)
For general amplification (Tr2)
s
Features
q
Two elements incorporated into one package.
q
Reduction of the mounting area and assembly cost by one half.
s
Basic Part Number of Element
q
2SC2404 + 2SB0709A(2SB709A)
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Marking Symbol:
ER
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
20
V
Emitter to base voltage
V
EBO
3
V
Collector current
I
C
15
mA
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
7
V
Collector current
I
C
100
mA
Peak collector current
I
CP
200
mA
Total power dissipation
P
T
150
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
55 to +150
C
Tr1
Overall
Tr2
1 : Emitter (Tr1)
4 : Emitter (Tr2)
2 : Base (Tr1)
5 : Base (Tr2)
3 : Collector (Tr2) 6 : Collector (Tr1)
EIAJ : SC88
SMini6-G1 Package
5
10
2.1
0.1
1.25
0.10
1
3
2
0.2
0.05
0.12
+0.05
0.02
0.2
0.1
(0.425)
1.3
0.1
2.0
0.1
0 to 0.1
0.9
0.1
0.9
+0.2 0.1
6
5
4
(0.65) (0.65)
1
6
5
Tr2
Tr1
2
3
4
Note) The Part number in the Parenthesis shows conventional part number.
2
Composite Transistors
XP04683
s
Electrical Characteristics
(Ta=25C)
q
Tr1
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
I
C
= 10
A, I
E
= 0
60
V
Collector to emitter voltage
V
CEO
I
C
= 2mA, I
B
= 0
50
V
Emitter to base voltage
V
EBO
I
E
= 10
A, I
C
= 0
7
V
Collector cutoff current
I
CBO
V
CB
= 20V, I
E
= 0
0.1
A
I
CEO
V
CE
= 10V, I
B
= 0
100
A
Forward current transfer ratio
h
FE
V
CE
= 10V, I
C
= 2mA
160
460
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 100mA, I
B
= 10mA
0.3
0.5
V
Transition frequency
f
T
V
CB
= 10V, I
E
= 1mA, f = 200MHz
80
MHz
Collector output capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
2.7
pF
q
Tr2
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
I
C
= 10
A, I
E
= 0
30
V
Emitter to base voltage
V
EBO
I
E
= 10
A, I
C
= 0
3
V
Forward current transfer ratio
h
FE
V
CE
= 6V, I
C
= 1mA
40
260
Base to emitter voltage
V
BE
V
CB
= 6V, I
E
= 1mA
720
mV
Common emitter reverse transfer capacitance
C
re
V
CB
= 6V, I
E
= 1mA, f = 10.7MHz
0.8
1
pF
Transition frequency
f
T
V
CB
= 6V, I
E
= 1mA, f = 200MHz
450
650
MHz
Noise figure
NF
V
CB
= 6V, I
E
= 1mA, f = 100MHz
3.3
dB
Power gain
PG
V
CB
= 6V, I
E
= 1mA, f = 100MHz
24
dB
3
Composite Transistors
XP04683
Common characteristics chart
P
T
-- Ta
Characteristics charts of Tr1
I
C
-- V
CE
I
C
-- I
B
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
0
0
4
8
12
16
12
10
8
6
4
2
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=100
A
80
A
60
A
40
A
20
A
0
0
40
80
120
160
12
10
8
6
4
2
Base current I
B
(
A)
Collector current I
C
(mA
)
V
CE
=6V
Ta=25C
0
0
2.0
1.6
1.2
0.8
0.4
30
25
20
15
10
5
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
V
CE
=6V
Ta=75C
25C
25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
0.1
0.3
360
300
240
180
120
60
1
3
10
30
100
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=6V
Ta=75C
25C
25C
0.1 0.3
1
3
10
30
100
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
0
1200
1000
800
600
400
200
V
CB
=6V
Ta=25C
0
50
100
150
200
250
0
20
40
80
60
140
120
100
160
Ambient temperature Ta (C)
Total power dissipation P
T
(mW
)
4
Composite Transistors
XP04683
Z
rb
-- I
E
C
re
-- V
CE
C
ob
-- V
CB
P
G
-- I
E
NF -- I
E
Characteristics charts of Tr2
I
C
-- V
CE
I
C
-- I
B
I
B
-- V
BE
0.1
0.3
1
3
10
Reverse transfer impedance Z
rb
(
)
Emitter current I
E
(mA)
0
120
100
80
60
40
20
V
CB
=6V
f=2MHz
Ta=25C
0.1
0.3
1
3
10
30
100
0
2.4
2.0
1.6
1.2
0.8
0.4
Common emitter reverse transfer capacitance C
re
(pF
)
Collector to emitter voltage V
CE
(V)
I
C
=1mA
f=10.7MHz
Ta=25C
0
0.1 0.3
10
20
30
40
35
25
15
5
1
3
10
30
100
Power gain PG
(dB
)
Emitter current I
E
(mA)
f=100MHz
R
g
=50
Ta=25C
V
CE
=10V
6V
0
0.1 0.3
12
10
8
6
4
2
1
3
10
30
100
Noise figure NF
(dB
)
Emitter current I
E
(mA)
f=100MHz
R
g
=50
Ta=25C
V
CE
=6V, 10V
0
0
18
2 4 6 8 10 12 14 16
60
50
40
30
20
10
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=300
A
250
A
200
A
150
A
100
A
50
A
0
0
100
200
300
400
60
50
40
30
20
10
Base current I
B
(
A)
Collector current I
C
(mA
)
V
CE
=5V
Ta=25C
0
0
0.4
0.8
1.2
1.6
400
350
300
250
200
150
100
50
Base to emitter voltage V
BE
(V)
Base current I
B
(
A
)
V
CE
=5V
Ta=25C
0
1.2
1.0
0.8
0.6
0.4
0.2
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
0
30
5
25
10
20
15
f=1MHz
I
E
=0
Ta=25C
5
Composite Transistors
XP04683
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
0
0
2.0
1.6
1.2
0.8
0.4
240
200
160
120
80
40
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
V
CE
=5V
Ta=75C
25C
25C
0.001
0.003
1
3
0.01
0.03
0.1
0.3
1
3
10
10
30
100 300 1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
600
500
400
300
200
100
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
0
0.1
0.3
40
80
120
160
140
100
60
20
1
3
10
30
100
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
V
CB
=10V
Ta=25C
0
1
5
20
2
8
7
6
5
4
3
2
1
3
50
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
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