ChipFind - документация

Электронный компонент: ES1C

Скачать:  PDF   ZIP
ER1A THRU ER1J
SURFACE MOUNT SUPERFAST RECTIFIER
VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere
FEATURES
l
For surface mounted applications
l
Low profile package
l
Built-in strain relief
l
Easy pick and place
l
Superfast recovery times for high efficiency
l
Plastic package has Underwriters Laboratory

Flammability Classification 94V-O
l
Glass passivated junction
l
High temperature soldering:
260
J
/10 seconds at terminals
MECHANICAL DATA
Case: JEDEC DO-214AA molded plastic
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA-481)
Weight: 0.003 ounce, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
J
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOLS
ER1A ER1B ER1C ER1D ER1E ER1G ER1J UNITS
Maximum Recurrent Peak Reverse Voltage
V
RRM
50
100
150
200
300
400
600
Volts
Maximum RMS Voltage
V
RMS
35
70
105
140
210
280
420
Volts
Maximum DC Blocking Voltage
V
DC
50
100
150
200
300
400
600
Volts
Maximum Average Forward Rectified Current,
at T
L
=100
J
I
(AV)
1.0
Amps
Peak Forward Surge Current 8.3ms single half sine-
wave superimposed on rated load(JEDEC method)
I
FSM
30.0
Amps
Maximum Instantaneous Forward Voltage at 1.0A
V
F
0.95
1.25
1.7
Volts
Maximum DC Reverse Current T
A
=25
J
At Rated DC Blocking Voltage T
A
=100
J
I
R
5.0
100
g
A
Maximum Reverse Recovery Time (Note 1)
T
RR
35.0
n
S
Typical Junction capacitance (Note 2)
C
J
10.0
P
F
Typical Thermal Resistance (Note 3)
R
K
JL
34
J
/W
Operating and Storage Temperature Range
T
J
,T
STG
-50 to +150
J
NOTES:
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, Irr=0.25A
2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts
3. 8.0mm
2
(.013mm thick) land areas
SMB/DO-214AA
RATING AND CHARACTERISTIC CURVES
ER1A THRU ER1J
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
Source Impedance = 50 Ohms
t
rr
+0.5A
0
-0.25
-1.0
SET TIME 1cm
BASE FOR
50 ns/cm
2.0
1.0
25
50
75 100
125
150
175
SINGLE PHASE HALF WAVE
RESISTIVE OR INDUCTIVE
P.C.B MOUNTED ON
0.3150.315"(8.08.0mm)
PAD AREAS
LEAD TEMPERATURE, J
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND
TEST CIRCUIT DIAGRAM
Fig. 2-MAXIMUM AVERAGE FORWARD
CURRENT RATING
1000
100
10
1
0.1
20 40 60 80 100 120
T
J
= 25
J
T
J
= 125
J
T
J
= 75
J
% OF PIV. VOLTS
10
1
0.1
0.01
0.001
0.2 0.4
0.6 0.8 1.0 1.2 1.4
ER1E
ER1A
ER1J
T
J
= 25
J
INSTANTANEOUS FORWARD VOLTAGE VOLTS
Fig. 3-TYPICAL REVERSE CHARACTERISTICS
Fig. 4-TYPICAL FORWARD CHARACTERISTICS
30
25
20
15
10
5
1 2
5 10 20
50 100
8.3ms SINGLE HALF SINE WAVE
JEDEC METHOD
NUMBER OF CYCLES AT 60Hz
14
12
10
8.0
6.0
4.0
2.0
.1
1
10
100
TJ = 25
J
f = 1.0MHz
Vsig = 50mVp-p
REVERSE VOLTAGE, VOLTS
Fig. 5-MAXIMUM NON-REPETITIVE SURGE
CURRENT
Fig. 6-TYPICAL JUNCTION CAPACITANCE
I
N
S
T
A
N
T
A
N
E
O
U
S

F
O
R
W
A
R
D

C
U
R
R
E
N
T

A
M
P
E
R
E
S
I
R
-
R
E
V
E
R
S
E

L
E
A
K
A
G
E

C
U
R
R
E
N
T
,

M
I
C
R
O
A
M
P
E
R
E
S
P
E
A
K

F
O
R
W
A
R
D

S
U
R
G
E

C
U
R
R
E
N
T
,

A
M
P
E
R
E
S
A
V
E
R
A
G
E

F
O
R
W
A
R
D
C
U
R
R
E
N
T

A
M
P
E
R
E
S
J
U
N
C
T
I
O
N

C
A
P
A
C
I
T
A
N
C
E
,

p
F