2006 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 8
Document No. 70-0041-04
www.psemi.com
The PE4122 is a high linearity, passive Quad MOSFET Mixer
for PCS & 3G Base Station Receivers, exhibiting high dynamic
range performance over a broad LO drive range up to +20
dBm. This mixer integrates passive matching networks to
provide single-ended interfaces for the RF and LO ports,
eliminating the need for external RF baluns or matching
networks. The PE4122 is optimized for frequency
down-conversion using low-side LO injection for PCS & 3G
Base Station applications, and is also suitable for use in
up-conversion applications.
The PE4122 is manufactured on Peregrine's UltraCMOSTM
process, a patented variation of silicon-on-insulator (SOI)
technology on a sapphire substrate, offering the performance
of GaAs with the economy and integration of conventional
CMOS.
Product Specification
UltraCMOSTM High Linearity Quad
MOSFET Mixer For PCS & 3G BTS
Product Description
Figure 1. Functional Diagram
PE4122
Features
Integrated, single-ended RF & LO
interfaces
High linearity: IIP3 >+ 30 dBm,
1.8 - 2.0 GHz (+17 dBm LO)
Low-conversion loss: 7.4 dB
(+17 dBm LO)
High isolation: typical LO-IF at 38 dB,
LO-RF at 34 dB
Designed for low-side LO injection
Figure 2. Package Type
Table 1. AC and DC Electrical Specifications @ +25 C
(Z
S
= Z
L
= 50
)
Notes:
1. An IF frequency of 260 MHz is a nominal frequency. The IF frequency can be specified by the user as long as the RF and LO frequencies
are within the specified maximum and minimum.
2. Conversion Loss includes loss of IF transformer (M/A COM ETK4-2T, nominal loss 0.7dB at 260 MHz).
*Test conditions unless otherwise noted: LO = 260 MHz, LO input drive = 17 dBm, RF input drive = 0 dBm.
8-lead TSSOP
PE4122
RF
LO
IF
Parameter Minimum
Typical
Maximum
Units
Frequency Range:
LO
RF
IF
1
1540
1800
--
--
--
260
1740
2000
--
MHz
MHz
MHz
Conversion Loss
2
7.4
7.8
dB
Isolation:
LO-RF
LO-IF
28
34
34
38
dB
dB
Input IP3
1.8 GHz
1.9 GHz
2.0 GHZ
28
31
28
30
33
30
dBm
dBm
dBm
Input 1 dB Compression
20
dBm
Product Specification
PE4122
Page 2 of 8
2006 Peregrine Semiconductor Corp. All rights reserved.
Document No. 70-0041-04
UltraCMOSTM RFIC Solutions
Table 2. Pin Descriptions
Table 3. Absolute Maximum Ratings
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOSTM
devices are immune to latch-up.
Figure 3. Pin Configuration (Top View)
Absolute Maximum Ratings are those values
listed in the above table. Exceeding these values
may cause permanent device damage.
Functional operation should be restricted to the
limits in the DC Electrical Specifications table.
Exposure to absolute maximum ratings for
extended periods may affect device reliability.
PE4122
5
6
7
8
4
3
2
1
GND
RF
GND
LO
GND
IF2
IF1
GND
Pin
No.
Pin
Name
Description
1 LO
LO
Input
2 GND
Ground connection for Mixer. Traces
should be physically short and connect
immediately to ground plane for best
performance.
3 RF
RF
Input
4 GND
Ground.
5 GND
Ground.
6
IF2
IF differential output
7
IF1
IF differential output
8 GND
Ground.
Symbol Parameter/Conditions
Min
Max
Units
T
ST
Storage temperature range
-65
150
C
T
OP
Operating temperature
range
-40 85 C
P
LO
LO input power
20
dBm
P
RF
RF input power
16
dBm
V
ESD
ESD Sensitive Device
250
V
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOSTM device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the rating specified.
2006 Peregrine Semiconductor Corp. All rights reserved.
Product Specification
PE4122
Page 3 of 8
Document No. 70-0041-04
www.psemi.com
Evaluation Kit
Figure 4. Evaluation Board Layout
Figure 5. Evaluation Board Schematic Diagram
Peregrine Specification 101/0054
Applications Support
If you have a problem with your evaluation kit or if
you have applications questions, please contact
applications support:
E-Mail: help@psemi.com (fastest response)
Phone: (858) 731-9400
Pin1
IF
PE4122
GND
IF2
IF1
GND
GND
RF
GND
LO
Figure 6. Evaluation Board Testing Block Diagram, 2-Tone Setup
LO
IF
RF
4122
Eval
Board
Sig
Gen
Sig
Gen
Hybrid
Tee
3 dB
PA
Sig
Gen
3 dB
Spectrum
Analyzer
3 dB
6 dB
6 dB
T2 M/A-Com E-Series RF 4:1 Transformer 2.0 1000 MHz ETK4-2T
Reference
Value / Description
T2
M/A Com ETK4-2T
U1 (Not Labeled)
PE4122 Mixer
R1
0
J1, J2, J3
SMA Connector
Table 4. Bill of Materials
Product Specification
PE4122
Page 4 of 8
2006 Peregrine Semiconductor Corp. All rights reserved.
Document No. 70-0041-04
UltraCMOSTM RFIC Solutions
Typical Performance Data
(LO=17 dBm, RF=0 dBm, IF=260 MHz)
Figure 8. Input 1dB Compression vs. Frequency
Figure 9. Input IP3 vs. Frequency
Figure 7. Conversion Loss vs. Frequency
-10
-8
-6
-4
-2
0
1800
1850
1900
1950
2000
Frequency (MHz)
-40 C
25 C
85 C
C
o
n
v
e
r
s
i
on
Lo
s
s
(
d
B
)
0
5
10
15
20
25
30
1800
1850
1900
1950
2000
1dB C
o
m
p
re
s
s
i
on (
d
Bm
)
Frequency (MHz)
85 C
-40 C
25 C
0
5
10
15
20
25
30
35
40
1800
1850
1900
1950
2000
IIP
3
(
d
B
m
)
Frequency (MHz)
-40 C
85 C
25 C
Figure 10. Output IP3 vs. Frequency
0
5
10
15
20
25
30
1800
1850
1900
1950
2000
O
I
P3
(
d
Bm
)
Frequency (MHz)
-40 C
85 C
25 C
2006 Peregrine Semiconductor Corp. All rights reserved.
Product Specification
PE4122
Page 5 of 8
Document No. 70-0041-04
www.psemi.com
Figure 12. LO-RF Isolation vs. Temperature
Figure 13. LO Port Return Loss @ 25C
Figure 11. LO-IF Isolation vs. Temperature
Figure 14. RF Port Return Loss @ 25C
-60
-50
-40
-30
-20
-10
0
1800
1850
1900
1950
2000
LO
-
I
F
I
s
o
l
at
i
on
(
d
B
)
Frequency (MHz)
-40 C
85 C
25 C
-50
-40
-30
-20
-10
0
1800
1850
1900
1950
2000
LO
-
R
F
I
s
o
l
at
i
o
n
(
d
B
)
Frequency (MHz)
-40 C
85 C
25 C
-40
-35
-30
-25
-20
-15
-10
-5
0
1.5
1.55
1.6
1.65
1.7
1.75
1.8
R
e
tu
r
n
L
o
s
s
(
d
B
)
Frequency (GHz)
-25
-20
-15
-10
-5
0
1.7
1.75
1.8
1.85
1.9
1.95
2
2.05
2.1
R
e
t
u
rn
L
o
s
s
(dB
)
Frequency (GHz)
Typical Performance Data
(LO=17 dBm, RF=0 dBm, IF=260 MHz)
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