2006 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 8
Document No. 70-0044-05
www.psemi.com
The PE4125 is a high linearity, passive Quad MOSFET Mixer
for GSM 800 & Cellular Base Station Receivers and exhibits
high dynamic range performance over a broad LO drive range
up to 20 dBm. This mixer integrates passive matching networks
to provide single-ended interfaces for the RF and LO ports,
eliminating the need for external RF baluns or matching
networks. The PE4125 is optimized for frequency
down-conversion using high-side LO injection for GSM 800 &
Cellular Base Station applications, and is also suitable for use
in up-conversion applications.
The PE4125 is manufactured on Peregrine's UltraCMOSTM
process, a patented variation of silicon-on-insulator (SOI)
technology on a sapphire substrate, offering the performance
of GaAs with the economy and integration of conventional
CMOS.
Product Specification
High Linearity Quad MOSFET Mixer
for GSM 800 & Cellular BTS
Product Description
Figure 1. Functional Diagram
PE4125
Features
Integrated, single-ended RF & LO
interfaces
High linearity: IIP3 > +32 dBm,
820 - 920 MHz (+17 dBm LO)
Low conversion loss: 6.9 dB
(+17 dBm LO)
High isolation: typical LO-IF at 43 dB,
LO-RF at 31 dB
Designed for low-side LO injection
Figure 2. Package Type
Table 1. AC and DC Electrical Specifications @ +25 C
(Z
S
= Z
L
= 50
)
Notes:
1. An IF frequency of 70 MHz is a nominal frequency. The IF frequency can be specified by the user as long as the RF and LO frequencies
are within the specified maximum and minimum.
2. Conversion Loss includes loss of IF transformer (M/A COM ETC1-1-13, nominal loss 0.7dB at 70 MHz).
*Test conditions unless otherwise noted: IF = 70 MHz, LO input drive = 17 dBm, RF input drive = 3 dBm.
8-lead TSSOP
PE4125
RF
LO
IF
Parameter Minimum
Typical
Maximum Units
Frequency Range:
LO
RF
IF
1
890
820
--
--
--
70
990
920
--
MHz
MHz
MHz
Conversion Loss
2
7.0
7.4
dB
Isolation:
LO-RF
LO-IF
30
38
31.5
40
dB
dB
Input IP3
30
32
dBm
Input 1 dB Compression
22
dBm
Product Specification
PE4125
Page 2 of 8
2006 Peregrine Semiconductor Corp. All rights reserved.
Document No. 70-0044-05
UltraCMOSTM RFIC Solutions
Table 2. Pin Descriptions
Table 3. Absolute Maximum Ratings
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOSTM device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the rating specified.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOSTM
devices are immune to latch-up.
Figure 3. Pin Configuration (Top View)
Absolute Maximum Ratings are those values
listed in the above table. Exceeding these values
may cause permanent device damage.
Functional operation should be restricted to the
limits in the DC Electrical Specifications table.
Exposure to absolute maximum ratings for
extended periods may affect device reliability.
PE4125
5
6
7
8
4
3
2
1
GND
RF
GND
LO
GND
IF2
IF1
GND
Pin
No.
Pin
Name
Description
1 LO
LO
Input
2 GND
Ground connection for Mixer. Traces
should be physically short and connect
immediately to ground plane for best
performance.
3 RF
RF
Input
4 GND
Ground.
5 GND
Ground.
6
IF2
IF differential output
7
IF1
IF differential output
8 GND
Ground.
Symbol Parameter/Conditions
Min
Max
Units
T
ST
Storage temperature range
-65
150
C
T
OP
Operating temperature
range
-40 85 C
P
LO
LO input power
20
dBm
P
RF
RF input power
12
dBm
V
ESD
ESD Sensitive Device
250
V
2006 Peregrine Semiconductor Corp. All rights reserved.
Product Specification
PE4125
Page 3 of 8
Document No. 70-0044-05
www.psemi.com
LO
IF
RF
Eval
Board
Sig
Gen
Sig
Gen
Hybrid
Tee
3 dB
PA
Sig
Gen
3 dB
Spectrum
Analyzer
3 dB
6 dB
6 dB
4125
Evaluation Kit
Figure 4. Evaluation Board Layout
Figure 5. Evaluation Board Schematic Diagram
Peregrine Specification 101/0054
Applications Support
If you have a problem with your evaluation kit or if
you have applications questions, please contact
applications support:
E-Mail: help@psemi.com (fastest response)
Phone: (858) 731-9400
Pin1
Figure 6. Evaluation Board Testing Block Diagram, 2-Tone Setup
T2, M/A-Com E-Series RF 1:1 Transformer ETC1-1-13
Table 4. Bill of Materials
PE4125
GND
IF2
IF1
GND
GND
RF
GND
LO
IF
T2
LO
RF
Reference
Value/Description
T2
M/A Com ETC1-1-13
U1 (Not Labeled)
PE4125 Mixer
R1
0
J1, J2, J3
SMA Connector
Product Specification
PE4125
Page 4 of 8
2006 Peregrine Semiconductor Corp. All rights reserved.
Document No. 70-0044-05
UltraCMOSTM RFIC Solutions
Typical Performance Plots
(LO=17 dBm, RF=3 dBm, IF=70 MHz)
Figure 8. Input 1dB Compression vs. Frequency
Figure 9. Input IP3 vs. Frequency
Figure 7. Conversion Loss vs. Frequency
Figure 10. Output IP3 vs. Frequency
-10
-8
-6
-4
-2
0
800
825
850
875
900
925
950
C
o
n
v
er
s
i
o
n
Lo
s
s
(
d
B
)
Frequency (MHz)
25 C
85 C
-40 C
0
5
10
15
20
25
820
840
860
880
900
920
1d
B C
o
m
p
r
e
s
s
i
o
n
(dB
m
)
Frequency (MHz)
85 C
25 C
-40 C
1dB Compression Measured at LO=14dBm
0
5
10
15
20
25
30
35
40
800
825
850
875
900
925
950
II
P
3
(
d
B
m
)
Frequency (MHz)
-40 C
25 C 85 C
0
5
10
15
20
25
30
800
825
850
875
900
925
950
OI
P
3
(
d
B
m
)
Frequency (MHz)
-40 C
25 C
85 C
2006 Peregrine Semiconductor Corp. All rights reserved.
Product Specification
PE4125
Page 5 of 8
Document No. 70-0044-05
www.psemi.com
Figure 12. LO-IF Isolation vs. Frequency
Figure 13. LO Port Return Loss vs. Frequency
Figure 11. LO-RF Isolation vs. Frequency
Figure 14. RF Port Return Loss vs. Frequency
Typical Performance Plots
(LO=17 dBm, RF=3 dBm, IF=70 MHz)
-40
-30
-20
-10
0
800
825
850
875
900
925
950
I
s
ol
at
i
o
n
(
d
B
)
Frequency (MHz)
85 C
25 C
-40 C
-60
-50
-40
-30
-20
-10
0
800
825
850
875
900
925
950
I
s
ol
at
i
o
n
(
d
B
)
Frequency (MHz)
85 C
25 C
-40 C
-20
-15
-10
-5
0
600
700
800
900
1000
1100
1200
1300
1400
L
O
P
o
rt
R
e
t
u
rn
L
o
s
s
(d
B
)
Frequency (MHz)
85 C
-40 C
25 C
-35
-30
-25
-20
-15
-10
-5
0
600
700
800
900
1000
1100
1200
1300
1400
R
F
Po
rt
R
e
t
u
rn
L
o
s
s
(
d
B
)
Return Loss Frequency
85 C
-40 C
25 C
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