EVERYTHING
IN A
NEW
LIGHT.
Description
The PerkinElmer family of large-area InGaAs
PIN photodiodes provide high responsivity
from 800 nm to 1700 nm for applications
including optical power meters, fiber optic test
equipment, near-IR spectoscopy and
instrumentation. All devices are planar
passivated and feature low capacitance for
extended bandwidth, and high shunt
resistance for maximum sensitivity. Typical
devices feature <1% non-linearity to optical
powers >+13 dBm (20 mW), and uniformity
within 2% across the detector active area.
Typical responsivity of 0.2 A/W at 850 nm for
our large-area InGaAs devices allows use of
a single detector in fiber optic test
instrumentation designed to operate at 850,
1300, and 1550 nm.
Devices are available with active areas from
0.5 mm to 3.0 mm in TO-type packages or on
thermoelectric coolers for increased sensitivity
(see below). Photodiodes can also be
mounted on customized ceramic sub-mounts
to suit specific application requirements.
PerkinElmer Optoelectronics Canada is
qualified to ISO-9001 and operates to MIL-Q-
9858A and AQAP-1 quality standards. All
devices undergo extended life-test and
periodic process qualification programs to
assure high reliability. In addition, all
production devices are sourced from a
qualified wafer, screened with a 16 hour,
200C burn-in at -10V bias (C30619 and
C30641) or -5V (C30642 and C30665), and
tested to meet responsivity, spectral noise,
capacitance, shunt resistance and dark
current specifications.
Large-Area InGaAs
Photodiodes
C30619, C30641, C30642, C30665
Features
0.5, 1.0, 2.0, and 3.0 mm diameters
High responsivity from 850 nm to 1550 nm
High shunt resistance, low dark current
TE-cooled package options
Low capacitance for fast response times
Applications
Power meters
Fiber identifiers
Laser burn-in racks
Near infrared instrumentation
F.T.I.R. spectroscopy
Package Options
TE-Cooled Devices: Large-area detectors are available
mounted on a 1-stage or 2-stage thermoelectric (TE) cooler.
Cooling increases shunt resistance (see Figure 2) thereby
reducing noise for increased sensitivity. Typical detector
temperature is -10C with a 1-stage TE cooler or -35C
using a 2-stage cooler. A TE-cooler option can be specified
by adding the extension -TC (1-stage cooler) or -DTC (2-
stage cooler) to the standard part number (see ordering
guide). More information is available from the "TC-Series
Cooled Photodiodes" datasheet from PerkinElmer
Optoelectronics Canada.
Specifications (at VR = VOP (typical), 22C)
Parameter
C30619
C30641
Units
Min
Typ
Max
Min
Typ
Max
Active Diameter
0.5
1.0
mm
Responsivity At 850 nm
0.10
0.20
0.10
0.20
A/W
At 1300 nm
0.80
0.90
0.80
0.90
A/W
At 1550 nm
0.85
0.95
0.85
0.95
A/W
Shunt Resistance (VR = 10 mV)
1
10
250
5
50
M
Dark Current
1
20
5
50
nA
Spectral Noise Current (10 kHz, 1.0 Hz)
0.02
0.10
0.04
0.15
pA/Hz
Capacitance At VR = 0V
20
25
100
125
pF
At VR = VOP
8
10
40
50
pF
Bandwidth (-3 dB, RL = 50)
350
75
MHz
Linearity
2
> +13
> +13
dBm
Available package types
D2, D14
D2, D14
-
Operating Ratings
Parameter
C30619
C30641
Units
Min
Typ
Max
Min
Typ
Max
Operating Voltage
0
5
10
0
2
5
V
Breakdown Voltage
20
80
20
80
V
Maximum Forward Current
10
10
mA
Maximum Photocurrent
100
100
mA
Power Dissipation
100
100
mW
Storage Temperature
-60
125
-80
125
C
Operating Temperature
-40
85
-40
85
C
Note 1. Selected higher shunt resistance devices are available to special order.
Note 2. Maximum optical power level for < 0.04 dB (1%) responsivity variation under 1300 nm CW illumination, at VR = VOP (typ).
Detector and Pre-Amplifier: Large-area InGaAs detectors are
also available integrated with a preamplifier and TE-cooler. The
HTE-series features large-area InGaAs detectors with a high
gain hybrid transimpedence amplifier mounted on a 2-stage TE
cooler. TE-cooling maximizes sensitivity and stabilizes op-amp
offset and output characteristics. This provides an easy-to-use
high sensitivity detector platform optimized for good temperature
stability over a wide operating temperature range. More
information is available from the HTE-series datasheet. The
standard HTE-2642 incorporates a C30642E chip.
C30619, C30641, C30642, C30665
Specifications (at VR = VOP (typical), 22C)
Parameter
C30642
C30665
Units
Min
Typ
Max
Min
Typ
Max
Active Diameter
2.0
3.0
mm
Responsivity At 850 nm
0.10
0.20
0.10
0.20
A/W
At 1300 nm
0.80
0.90
0.80
0.90
A/W
At 1550 nm
0.85
0.95
0.85
0.95
A/W
Shunt Resistance (VR = 10 mV)
1
2
25
1
10
M
Dark Current
10
3
25
3
nA
Spectral Noise Current (10 kHz, 1.0 Hz)
0.03
0.15
0.04
0.20
pA/Hz
Capacitance At VR = 0V
300
500
1000
1250
pF
At VR = 2.0V (typical)
150
400
pF
Bandwidth (-3 dB, RL = 50)
20
3.0
MHz
Linearity
2
+11
+11
dBm
Available package types
D15
D15
-
Operating Ratings
Parameter
C30642
C30665
Units
Min
Typ
Max
Min
Typ
Max
Operating Voltage
0
5
0
5
V
Breakdown Voltage
15
50
10
50
V
Maximum Forward Current
10
10
mA
Maximum Photocurrent
100
100
mA
Power Dissipation
250
250
mW
Storage Temperature
-60
125
-80
125
C
Operating Temperature
-40
85
-40
85
C
Note 1. Selected higher shunt resistance devices are available to special order.
Note 2. Maximum optical power level for < 0.04 dB (1%) responsivity variation under 1300 nm CW illumination, at VR = VOP (typ).
Note 3. At VR = 2.0V
Figure 2. Typical Shunt Resistance as a Function of Temperature.
Figure 1. Typical Responsivity vs. Wavelength.
C30619, C30641, C30642, C30665
Figure 3. Typical Capacitance vs. Operating Voltage.
Figure 4. Typical Dark Current vs. Operating Voltage.
Figure 5. Typical Responsivity Temperature Coefficients.
Figure 6. Typical Responsivity Scan of a 1mm Photodiode.
Figure 7. Package D2: TO-18 Low Profile with Silicon Window. To special order.
Figure 8. Package D-14: TO-18 with Glass Window.
C30619, C30641, C30642, C30665
Wavelength
(nm)
850
1060
1300
1550
1650
Temperature
Coefficient
1
(%/C)
-0.121
0.039
0.012
0.009
0.085
1.287
(20C to 85C)
(-40C to 20C)
Note1:
Measured from -40C to +85C except
1650nm, as indicated.
Ordering Guide
C30619, C30641, C30642, C30665
For more information e-mail us at opto@perkinelmer.com or visit our web site at www.perkinelmer.com/opto
All values are nominal; specifications subject to change without notice.
is a registered trademark of PerkinElmer, Inc.
PerkinElmer Optoelectronics
22001 Dumberry Road,
Vaudreuil, Qubec
Canada J7V 8P7
Phone: (450) 424-3300
Fax: (450) 424-3411
2000 PerkinElmer, Inc.
All rights reserved.
0700
Device Package Availability
Window
Window
Package Type
Option
Type
C30619
C30641
C30642
C30665
ESilicon
D2
1
D2
1
-
-
G
Glass
D14
D14
D15
D15
Note 1: Special Order
TE-Cooler Option:
TC:
1-stage TE cooler
DTC:
2-stage TE cooler
(Not yet available for C30665)
Window Option:
E:
Silicon
G:
Glass
(See below for availability)
Chip Type:
619:
0.5mm diameter
641:
1.0mm diameter
642:
2.0mm diameter
665:
3.0mm diameter
#
#
#
L
-
X
X
X
C30
Figure 9. Package D15: TO-5 with Glass Window.
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