D
A
T
A
S
H
E
E
T
Applications
OTDR
Eye safe range
finding
Features
Spectral response
(1100 to 1700nm)
High responsivity
Low dark current
and noise
Large area
Optoelectronics
C30645E/C30662E Series
InGaAs Avalanche Photodiode
w w w . o p t o e l e c t r o n i c s . p e r k i n e l m e r . c o m
Description
The C30645E/C30662E are high speed, large area lnGaAs/lnP
avalanche photodiodes. These devices provide high Q.E., high
responsivity and low noise in the spectral range between 1100nm
and 1700nm.They are optimized for use at a wavelength of
1540nm, suitable for use in eye-safe laser range finding systems.
These APDs are supplied in a hermetically sealed TO-18 package
or on a ceramic carrier.
Custom packaging is also available. Please contact PerkinElmer
Optelectronics Canada to discuss the packaging in further detail.
Quality & Reliability
PerkinElme
the highest quality product to our customer.
r Optoelectronics Canada is committed to supplying
We are certified to meet ISO-9001 and we are designed to meet
MIL-STD-883 and/or MIL-STD-750 specifications.
All devices undergo extended burn-in and periodic process
qualification programs to assure high reliability.
C30645E
C30662E
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Diameter
80
200
um
Operating Voltage (Vop)
40
70
40
70 V
Temperature Coefficient of Vr for
Constant Gain
0.14
0.20
0.14
0.20
V / deg C
Responsivity (@1550nm)
9.3
9.3
A/W
Dark Current (@M=10)
50
150 nA
Spectral Noise Current (@M=10)
1.0
1.5 pA/rt
Hz
Capacitance
1.25
2.5
pF
Bandwidth
1000
200
MHz
Quantum Efficiency (1300-1550nm)
75%
75%
Maximum Useable Gain (M)
10
20
10
20
InGaAs Avalanche Photodiode C30645E/C30662E Series
w w w . o p t o e l e c t r o n i c s . p e r k i n e l m e r . c o m
Table 1. Electrical Characteristics at T
A
= 22C
1. A specific voltage, Vop, is supplied with each device. When the photodiode is operated at this voltage (at
22C), the device will meet the electrical characteristic limits shown above. The voltage value will be within the
range of 40 to 70 volts.
2. The voltage dependence of the gain, for gains above 4, is given approximately by the following empirical
formula:
M =50/ (Vb-Vop). Rough approximate of the sensitivity.
3. Gain and quantum efficiency are not directly measurable quantities. The numbers quoted are estimated typical
values. Gain, quantum efficiency and responsivity are related by the following: R =M /1.24 where is the
wavelength in units of mm, is the quantum efficiency, M is gain.
4. The detector n ise current / Hz
o
is given by the following expression:
in = (2q (l
s
+l
b
M F)
)
Where: F =
k
eff
M + (1 -
k
eff
) (2-1/M) and l
s
and l
b
are the unmultiplied and multiplied portions of the dark
current, respectively. The total dark current is given by: It = l
s
+l
b
M.
However, since both
l
s
and l
b
are somewhat voltage dependent, and M is not directly measurable (see Note 3),
it is not usually possible to determine both
l
s
and l
b
unambiguously. Since system performance depends on
noise current and responsivity, these measurable quantities are the ones that have been specified.
5. Most devices can be operated at gains up to about 30 or more, but with values of noise current
correspondingly higher, as indicated by the discussion in Note 4 above.
1/2
Page 2
2
1/2
Standard TO-18 Package
Ceramic Package
Units
Forward Current
5
5
mA
Total Power dissipation
20
20
mW
Operating Temperature
-60 to +125
-60 to +125
C
Storage Temperature
-20 to +70
-20 to +70
C
Soldering Temperature (10 seconds)
250
250
C
Page 3
Figure 1. Mechanical Characteristics
TO 18 Package
Ceramic Package
InGaAs Avalanche Photodiode C30645E/C30662E Series
Table 2. Absolute Maximum Rating, Limiting Values
w w w . o p t o e l e c t r o n i c s . p e r k i n e l m e r . c o m
Figure 2. Spectral Responsivity Curve
InGaAs Avalanche Photodiode C30645E/C30662E Series
Page 4
Page 3
Temp.
Responsivity vs Wavelength
(Estimate for APD, M=10)
0
1
2
3
4
5
6
7
8
9
10
11
12
1
1.05
1.1
1.15
1.2
1.25
1.3
1.35
1.4
1.45
1.5
1.55
1.6
1.65
1.7
1.75
1.8
Wavelength (um)
Responsi
v
i
t
y (
A
/
W
)
-20
0
25
70
Figure 3. Typical Gain vs Bias
Typical Gain vs Bias
1
10
100
35
37
39
41
43
45
47
49
51
Vop(V)
Gain
w w w . o p t o e l e c t r o n i c s . p e r k i n e l m e r . c o m
Ordering Information
For more information e-mail us at opto@perkinelmer.com or visit our website at
www.optoelectronics.perkinelmer.com.
All values are nominal; specifications subject to change without notice.
2004 PerkinElmer, Inc. All rights reserved.
Page 5
Optoelectronics
Headquarters
44370 Christy Street
Fremont, CA 94538-
3180
Phone: (510) 979-5600
(800) 775-6786
Fax: (510) 687-1140
PerkinElmer GmbH & Co. KG
Wenzel-Jaksch-Str.31
65199 Wiesbaden
Phone: +49 611 492 247
Fax: +49 611 492 170
Figure 4. Typical Gain vs (V breakdown - V bias)
Typical Gain vs (V_Breakdown - V_Bias)
1
10
100
0
2
4
6
8
10
12
14
Vbr-Vop (V)
Gain
InGaAs Avalanche Photodiode C30645E/C30662E Series
PerkinElmer Singapore Pte Ltd.
47 Ayer Rajah Crescent #06-12
Singapore 139947
Phone: +65 6775 2022
Fax: +65 6775 1008
PerkinElmer Canada Inc.
16800 Trans-Canada Highway
Kirkland, Quebec H9H 5G7
Canada
Phone: (514) 693-2200
Fax : (514) 693-2210
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