29
VTB Process Photodiodes
VTB5051
PRODUCT DESCRIPTION
Planar silicon photodiode in a "flat" window, dual
lead TO-5 package. Cathode is common to the
case. These diodes have very high shunt
resistance and have good blue response.
PACKAGE DIMENSIONS
inch (mm)
CASE 14 TO-5 HERMETIC
CHIP ACTIVE AREA: .023 in
2
(14.8 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
-40C to 110C
Operating Temperature:
-40C to 110C
ELECTRO-OPTICAL CHARACTERISTICS @ 25C
(See also VTB curves, pages 21-22)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTB5051
UNITS
Min.
Typ.
Max.
I
SC
Short Circuit Current
H = 100 fc, 2850 K
85
130
A
TC I
SC
I
SC
Temperature Coefficient
2850 K
.12
.23
%/C
V
OC
Open Circuit Voltage
H = 100 fc, 2850 K
490
mV
TC V
OC
V
OC
Temperature Coefficient
2850 K
-2.0
mV/C
I
D
Dark Current
H = 0, VR = 2.0 V
250
pA
R
SH
Shunt Resistance
H = 0, V = 10 mV
.56
G
TC R
SH
R
SH
Temperature Coefficient
H = 0, V = 10 mV
-8.0
%/C
C
J
Junction Capacitance
H = 0, V = 0
3.0
nF
S
R
Sensitivity
365 nm
.10
A/W
range
Spectral Application Range
320
1100
nm
p
Spectral Response - Peak
920
nm
V
BR
Breakdown Voltage
2
40
V
1/2
Angular Resp. - 50% Resp. Pt.
50
Degrees
NEP
Noise Equivalent Power
2.1 x 10
-14
(Typ.)
D*
Specific Detectivity
1.8 x 10
13
(Typ.)
/ W
W
Hz
/
cm Hz
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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