31
VTB Process Photodiodes
VTB5051J
PRODUCT DESCRIPTION
Planar silicon photodiode in a "flat" window,
three lead TO-5 package. Chip is isolated from
the case. The third lead allows the case to be
grounded. These diodes have very high shunt
resistance and have good blue response.
PACKAGE DIMENSIONS
inch (mm)
CASE 14A TO-5 HERMETIC
CHIP ACTIVE AREA: .023 in
2
(14.8 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
-40C to 110C
Operating Temperature:
-40C to 110C
ELECTRO-OPTICAL CHARACTERISTICS @ 25C
(See also VTB curves, pages 21-22)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTB5051J
UNITS
Min.
Typ.
Max.
I
SC
Short Circuit Current
H = 100 fc, 2850 K
85
130
A
TC I
SC
I
SC
Temperature Coefficient
2850 K
.12
.23
%/C
V
OC
Open Circuit Voltage
H = 100 fc, 2850 K
490
mV
TC V
OC
V
OC
Temperature Coefficient
2850 K
-2.0
mV/C
I
D
Dark Current
H = 0, VR = 2.0 V
250
pA
R
SH
Shunt Resistance
H = 0, V = 10 mV
.56
G
TC R
SH
R
SH
Temperature Coefficient
H = 0, V = 10 mV
-8.0
%/C
C
J
Junction Capacitance
H = 0, V = 0
3.0
nF
S
R
Sensitivity
365 nm
.10
A/W
range
Spectral Application Range
320
1100
nm
p
Spectral Response - Peak
920
nm
V
BR
Breakdown Voltage
2
40
V
1/2
Angular Resp. - 50% Resp. Pt.
50
Degrees
NEP
Noise Equivalent Power
2.1 x 10
-14
(Typ.)
D*
Specific Detectivity
1.8 x 10
13
(Typ.)
/ W
W
Hz
/
cm Hz
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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