35
VTB Process Photodiodes
VTB6061B
H
PRODUCT DESCRIPTION
Large area planar silicon photodiode in a "flat"
window, dual lead TO-8 package. The package
incorporates an infrared rejection filter. Cathode
is common to the case. These diodes have very
high shunt resistance and have good blue
response.
PACKAGE DIMENSIONS
inch (mm)
CASE 15 TO-8 HERMETIC
CHIP ACTIVE AREA: .058 in
2
(37.7 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
-40C to 110C
Operating Temperature:
-40C to 110C
ELECTRO-OPTICAL CHARACTERISTICS @ 25C
(See also VTB curves, pages 21-22)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTB6061BH
UNITS
Min.
Typ.
Max.
I
SC
Short Circuit Current
H = 100 fc, 2850 K
26
35
A
TC I
SC
I
SC
Temperature Coefficient
2850 K
.02
.08
%/C
V
OC
Open Circuit Voltage
H = 100 fc, 2850 K
420
mV
TC V
OC
V
OC
Temperature Coefficient
2850 K
-2.0
mV/C
I
D
Dark Current
H = 0, VR = 2.0 V
2.0
nA
R
SH
Shunt Resistance
H = 0, V = 10 mV
.10
G
TC R
SH
R
SH
Temperature Coefficient
H = 0, V = 10 mV
-8.0
%/C
C
J
Junction Capacitance
H = 0, V = 0
8.0
nF
range
Spectral Application Range
330
720
nm
p
Spectral Response - Peak
580
nm
V
BR
Breakdown Voltage
2
40
V
1/2
Angular Resp. - 50% Resp. Pt.
55
Degrees
NEP
Noise Equivalent Power
1.0 x 10
-13
(Typ.)
D*
Specific Detectivity
6.1 x 10
12
(Typ.)
W
Hz
/
cm Hz W
/
PerkinElmer Optoelectronics,
22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto
RoHS Compliant
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