42
VTB Process Photodiodes
VTB8440B, 8441B
PRODUCT DESCRIPTION
Planar silicon photodiode in recessed ceramic
package. The package incorporates an infrared
rejection filter. These diodes have very high
shunt resistance and have good blue response.
PACKAGE DIMENSIONS
inch (mm)
CASE 21F 8 mm CERAMIC
CHIP ACTIVE AREA: .008 in
2
(5.16 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
-20C to 75C
Operating Temperature:
-20C to 75C
ELECTRO-OPTICAL CHARACTERISTICS @ 25C
(See also VTB curves, pages 21-22)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTB8440B
VTB8441B
UNITS
Min.
Typ.
Max.
Min.
Typ.
Max.
I
SC
Short Circuit Current
H = 100 fc, 2850 K
4
5
4
5
A
TC I
SC
I
SC
Temperature Coefficient
2850 K
.02
.08
.02
.08
%/C
V
OC
Open Circuit Voltage
H = 100 fc, 2850 K
420
420
mV
TC V
OC
V
OC
Temperature Coefficient
2850 K
-2.0
-2.0
mV/C
I
D
Dark Current
H = 0, VR = 2.0 V
2000
100
pA
R
SH
Shunt Resistance
H = 0, V = 10 mV
.07
1.4
G
TC R
SH
R
SH
Temperature Coefficient
H = 0, V = 10 mV
-8.0
-8.0
%/C
C
J
Junction Capacitance
H = 0, V = 0
1.0
1.0
nF
range
Spectral Application Range
330
720
330
720
nm
p
Spectral Response - Peak
580
580
nm
V
BR
Breakdown Voltage
2
40
2
40
V
1/2
Angular Resp. - 50% Resp. Pt.
50
50
Degrees
NEP
Noise Equivalent Power
1.1 x 10
-13
(Typ.)
2.4 x 10
-14
(Typ.)
D*
Specific Detectivity
2.2 x 10
12
(Typ.)
9.7 x 10
12
(Typ.)
/ W
W
Hz
/
cm Hz
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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