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Электронный компонент: VTD206

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77
Alternate Source/
Second Source Photodiodes
VTD206
(SFH206 INDUSTRY EQUIVALENT)
PRODUCT DESCRIPTION
Large area planar silicon photodiode in a cast epoxy
sidelooker, similar in outline to the TO-92 package.
The package material filters out all visible light but
passes infrared. These diodes exhibit low dark
current under reverse bias and fast speed of
response.
PACKAGE DIMENSIONS
inch (mm)
CASE 61 TO-92 TYPE (FLAT LENS)
CHIP ACTIVE AREA: .011 in
2
(7.41 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
-40C to 100C
Operating Temperature:
-40C to 100C
ELECTRO-OPTICAL CHARACTERISTICS @ 25C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTD206
UNITS
Min.
Typ.
Max.
I
SC
Short Circuit Current
940 nm, H = 0.5 mW/cm
2
15
25
A
TC I
SC
I
SC
Temperature Coefficient
2856 K
.20
%/C
V
OC
Open Circuit Voltage
940 nm, H = 0.5 mW/cm
2
250
350
mV
TC V
OC
V
OC
Temperature Coefficient
2856 K
-2.6
mV/C
I
D
Dark Current
H = 0, V
R
= 10 V
2
30
nA
C
J
Junction Capacitance
H = 0, V
R
= 0 V, 1 MHz
72
pF
t
R
/t
F
Rise/Fall Time @ RL = 50
V
R
= 5 V, 850 nm
20
nsec
S
R
Sensitivity
@ Peak
0.6
A/W
range
Spectral Application Range
750
1100
nm
p
Spectral Response - Peak
925
nm
V
BR
Breakdown Voltage
20
50
V
1/2
Angular Resp.-50% Resp. Pt.
60
Degrees
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto