117
GaAlAs Infrared Emitting Diodes
T-1 (5 mm) Bullet Package -- 880 nm
VTE1285
PACKAGE DIMENSIONS
inch (mm)
CASE 62
T-1 (5 mm) BULLET
CHIP SIZE: .015" x .015"
DESCRIPTION
This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.
The custom lens allows this cost effective device to have a very narrow half power beam emission of 8.
ABSOLUTE MAXIMUM RATINGS @ 25C
(unless otherwise noted)
Maximum Temperatures
Storage and Operating:
-40C to 100C
Continuous Power Dissipation:
200 mW
Derate above 30C:
2.86 mW/C
Maximum Continuous Current:
100 mA
Derate above 30C:
1.43 mA/C
Peak Forward Current, 10 s, 100 pps:
2.5 A
Temp. Coefficient of Power Output (Typ.):
-.8%/C
Maximum Reverse Voltage:
5.0V
Maximum Reverse Current @ V
R
= 5V:
10 A
Peak Wavelength (Typical):
880 nm
Junction Capacitance @ 0V, 1 MHz (Typ.):
23 pF
Response Time @ I
F
= 20 mA
Rise: 1.0 s
Fall: 1.0 s
Lead Soldering Temperature:
260C
(1.6 mm from case, 5 seconds max.)
ELECTRO-OPTICAL CHARACTERISTICS @ 25C
(See also GaAlAs curves, pages 108-110)
Refer to General Product Notes, page 2.
Part Number
Output
Forward Drop
Half Power Beam
Angle
Irradiance
Radiant
Intensity
Total Power
Test
Current
V
F
E
e
Condition
I
e
P
O
I
FT
@ I
FT
1/2
mW/cm
2
distance
Diameter
mW/sr
mW
mA
(Pulsed)
Volts
Typ.
Min.
Typ.
mm
mm
Min.
Typ.
Typ.
Max.
VTE1285
3.0
5.5
36
6.4
39
20
100
1.5
2.0
8
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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