52
VTP Process Photodiodes
VTP1232
(Also available in infrared transmitting visible
blocking version)
PRODUCT DESCRIPTION
This photodiode features the largest detection
area available in a clear, endlooking T-1
package. Combined with excellent dark current,
it can fulfill the demands of many difficult
applications.
PACKAGE DIMENSIONS
inch (mm)
CASE 26 T-1
CHIP ACTIVE AREA: .0036 in
2
(2.326 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
-40C to 100C
Operating Temperature:
-40C to 100C
ELECTRO-OPTICAL CHARACTERISTICS @ 25C
(See also VTP curves, page 46)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTP1232
UNITS
Min.
Typ.
Max.
I
SC
Short Circuit Current
H = 100 fc, 2850 K
100
A
TC I
SC
I
SC
Temperature Coefficient
2850 K
0.20
%/C
Re
Responsivity
880 nm
0.06
0.076
A/(W/cm
2
)
V
OC
Open Circuit Voltage
H = 100 fc, 2850 K
.42
mV
TC V
OC
V
OC
Temperature Coefficient
2850 K
-2.0
mV/C
I
D
Dark Current
H = 0, VR = 10 V
25
nA
C
J
Junction Capacitance
H = 0, V = 0 V
.18
.30
nF
range
Spectral Application Range
400
1100
nm
p
Spectral Response - Peak
920
nm
S
R
Sensitivity
@ Peak
0.60
A/W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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