103
.050" NPN Phototransistors
TO-46 Lensed Package
VTT1115, 16, 17
PACKAGE DIMENSIONS
inch (mm)
CASE 3
TO-46 HERMETIC (LENSED)
CHIP TYPE: 50T
PRODUCT DESCRIPTION
A large area high sensitivity NPN silicon phototransistor in
a lensed, hermetically sealed, TO-46 package. The
hermetic package offers superior protection from hostile
environments The base connection is brought out
allowing conventional transistor biasing. These devices
are spectrally matched to the VTE11xx series of IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25C unless otherwise noted)
Maximum Temperatures
Storage Temperature:
-40C to 110C
Operating Temperature:
-40C to 110C
Continuous Power Dissipation:
250 mW
Derate above 30C:
3.12 mW/C
Maximum Current:
200 mA
Lead Soldering Temperature:
260C
(1.6 mm from case, 5 sec. max.)
ELECTRO-OPTICAL CHARACTERISTICS @ 25C
(See also typical curves, pages 91-92)
Refer to General Product Notes, page 2.
Part Number
Light Current
Dark Current
Collector
Breakdown
Emitter
Breakdown
Saturation
Voltage
Rise/Fall Time
Angular
Response
1/2
l
C
l
CEO
V
BR(CEO)
V
BR(ECO)
V
CE(SAT)
t
R
/t
F
mA
H
fc (mW/cm
2
)
V
CE
= 5.0 V
H = 0
l
C
= 100 A
H = 0
l
E
= 100 A
H = 0
l
C
= 1.0 mA
H = 400 fc
l
C
= 1.0 mA
R
L
= 100
Min.
Max.
(nA)
Max.
V
CE
(Volts)
Volts, Min.
Volts, Min.
Volts, Max.
sec, Typ.
Typ.
VTT1115
1.0
--
20 (1)
100
10
30
6.0
0.40
5.0
15
VTT1116
2.0
--
20 (1)
100
10
30
4.0
0.40
8.0
15
VTT1117
4.0
--
20 (1)
100
10
30
4.0
0.40
8.0
15
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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