1996 Apr 26
2
Philips Semiconductors
Product specification
Voltage regulator diodes
1N4728A to 1N4749A
FEATURES
Total power dissipation:
max. 1000 mW
Tolerance series:
5%
Working voltage range:
nom. 3.3 to 24 V.
APPLICATIONS
Low voltage stabilizers.
DESCRIPTION
Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages.
The series consists of 22 types with nominal working voltages from 3.3 to 24 V.
Fig.1 Simplified outline (SOD66; DO-41) and symbol.
The diodes are type branded.
handbook, halfpage
MAM241
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
F
continuous forward current
-
500
mA
I
ZM
working current
see Table
"Per type"
I
ZSM
non-repetitive peak reverse current
see Table
"Per type"
P
tot
total power dissipation
T
amb
= 50
C
-
1000
mW
T
stg
storage temperature
-
65
+200
C
T
j
junction temperature
-
65
+200
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
I
F
= 200 mA; see Fig.3
-
1.2
V
1996
Apr
26
3
Philips Semiconductors
Product specification
V
oltage regulator diodes
1N4728A to 1N4749A
Per type
T
j
= 25
C; unless otherwise specified.
Notes
1. V
Z
is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25
C.
2. Half square wave or equivalent sinewave pulse
1
/
120
second duration superimposed on I
Ztest
.
TYPE No.
WORKING
VOLTAGE
V
Z
(V)
(1)
at I
Ztest
TEST CURRENT
I
Ztest
(mA)
DIFFERENTIAL
RESISTANCE
REVERSE CURRENT
at REVERSE VOLTAGE
WORKING
CURRENT
I
ZM
(mA)
NON-REPETITIVE
PEAK REVERSE
CURRENT
I
ZSM
(mA)
(2)
r
dif
(
)
at I
Ztest
r
dif
(
)
at I
Z
I
Z
(mA)
I
R
(
A)
V
R
(V)
NOM.
MAX.
MAX.
MAX.
MAX.
MAX.
1N4728A
3.3
76
10
400
1
100
1
276
1380
1N4729A
3.6
69
10
400
1
100
1
252
1260
1N4730A
3.9
64
9
400
1
50
1
234
1190
1N4731A
4.3
58
9
400
1
10
1
217
1070
1N4732A
4.7
53
8
500
1
10
1
193
970
1N4733A
5.1
49
7
550
1
10
1
178
890
1N4734A
5.6
45
5
600
1
10
2
162
810
1N4735A
6.2
41
2
700
1
10
3
146
730
1N4736A
6.8
37
3.5
700
1
10
4
133
660
1N4737A
7.5
34
4
700
0.5
10
5
121
605
1N4738A
8.2
31
4.5
700
0.5
10
6
110
550
1N4739A
9.1
28
5
700
0.5
10
7
100
500
1N4740A
10
25
7
700
0.25
10
7.6
91
454
1N4741A
11
23
8
700
0.25
5
8.4
83
414
1N4742A
12
21
9
700
0.25
5
9.1
76
380
1N4743A
13
19
10
700
0.25
5
9.9
69
344
1N4744A
15
17
14
700
0.25
5
11.4
61
304
1N4745A
16
15.5
16
700
0.25
5
12.2
57
285
1N4746A
18
14
20
750
0.25
5
13.7
50
250
1N4747A
20
12.5
22
750
0.25
5
15.2
45
225
1N4748A
22
11.5
23
750
0.25
5
16.7
41
205
1N4749A
24
10.5
25
750
0.25
5
18.2
38
190
1996 Apr 26
5
Philips Semiconductors
Product specification
Voltage regulator diodes
1N4728A to 1N4749A
GRAPHICAL DATA
Fig.2 Thermal resistance from junction to tie-point; lead length 4 mm.
handbook, full pagewidth
10
-
1
1
10
10
2
10
3
10
4
10
5
MBG928
1
10
10
2
10
3
Rth j-tp
(K/W)
tp (ms)
tp
tp
T
T
=
= 1
0.02
0.01
0
0.75
0.50
0.33
0.20
0.10
0.05
Fig.3
Forward current as a function of
forward voltage.
handbook, halfpage
0
1.0
300
0
100
200
MBG925
0.5
VF (V)
IF
(mA)
(1)
(2)
(1) T
j
= 200
C; typical values.
(2) T
j
= 25
C; typical values.
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