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Электронный компонент: 1PS10SB82

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DATA SHEET
Product specification
2003 Aug 20
DISCRETE SEMICONDUCTORS
1PS10SB82
Schottky barrier diode
M3D891
BOTTOM VIEW
2003 Aug 20
2
Philips Semiconductors
Product specification
Schottky barrier diode
1PS10SB82
FEATURES
Low forward voltage
Low diode capacitance
Leadless ultra small plastic package
(1.0 mm
0.6 mm
0.5 mm)
Boardspace 1.17 mm
2
(approx. 10% of SOT23)
Power dissipation comparable to SOT23.
APPLICATIONS
UHF mixers
Sampling circuits
Modulators
Phase detectors
Mobile communication, digital (still) cameras, PDA's and
PCMCIA cards.
DESCRIPTION
An epitaxial Schottky barrier diode encapsulated in a
SOD882 leadless ultra small plastic package.
ESD sensitive device, observe handling precautions.
handbook, halfpage
MDB391
Bottom view
Fig.1 Simplified outline (SOD882), pin
configuration and symbol.
Marking code: S5.
The marking bar indicates the cathode.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
15
V
I
F
continuous forward current
-
30
mA
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
2003 Aug 20
3
Philips Semiconductors
Product specification
Schottky barrier diode
1PS10SB82
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
= 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60
m copper strip line.
Soldering
Reflow soldering is the only recommended soldering method.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
F
forward voltage
see Fig.2
I
F
= 1 mA
-
340
mV
I
F
= 30 mA
-
700
mV
r
D
differential diode forward resistance
f = 1 MHz; I
F
= 5 mA; see Fig.5
12
-
I
R
continuous reverse current
V
R
= 1 V; see Fig.3; note 1
-
0.2
A
C
d
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.4
1
-
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
2003 Aug 20
4
Philips Semiconductors
Product specification
Schottky barrier diode
1PS10SB82
GRAPHICAL DATA
handbook, halfpage
1.6
0
(1)
(3)
0.4
0.8
1.2
VF (V)
IF
(mA)
10
3
10
2
10
1
MLE112
(2)
(2)
(1)
(3)
Fig.2
Forward current as a function of forward
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
15
10
VR (V)
IR
(
A)
5
0
MLE113
10
3
10
2
10
1
10
-
1
10
-
2
(3)
(1)
(2)
Fig.3
Reverse current as a function of reverse
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
0
2
10
1.2
1
0.6
0.4
0.8
4
VR (V)
Cd
(pF)
6
8
MLE114
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
amb
= 25
C.
handbook, halfpage
10
3
10
2
10
1
MLE115
10
-
1
1
IF (mA)
rD
(
)
10
10
2
Fig.5
Differential diode forward resistance as a
function of forward current; typical values.
f = 1 MHz; T
amb
= 25
C.
2003 Aug 20
5
Philips Semiconductors
Product specification
Schottky barrier diode
1PS10SB82
PACKAGE OUTLINE
UNIT
A
1
max.
A
(1)
b
e
1
L
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
mm
0.50
0.46
0.55
0.47
0.03
0.62
0.55
0.65
DIMENSIONS (mm are the original dimensions)
Notes
1. Including plating thickness
2. The marking bar indicates the cathode
0.30
0.22
SOD882
03-04-16
03-04-17
D
E
1.02
0.95
L
E
(2)
2
1
b
A1
A
D
L
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm
SOD882
0
0.5
1 mm
scale
e1