1996 Sep 03
2
Philips Semiconductors
Product specification
High-speed double diode
1PS184
FEATURES
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 80 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The 1PS184 consists of two
high-speed switching diodes with
common cathodes, fabricated in
planar technology, and encapsulated
in the small plastic SMD SC59
package.
PINNING
PIN
DESCRIPTION
1
anode (a1)
2
anode (a2)
3
common cathode
Fig.1 Simplified outline (SC59) and symbol.
Top view
2
1
3
MAM084
2
1
3
Marking code: B3T.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
RRM
repetitive peak reverse voltage
-
85
V
V
R
continuous reverse voltage
-
80
V
I
F
continuous forward current
single diode loaded; see Fig.2;
note 1
-
215
mA
double diode loaded; see Fig.2;
note 1
-
125
mA
I
FRM
repetitive peak forward current
-
500
mA
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
C prior to
surge
t = 1
s
-
4
A
t = 1 s
-
0.5
A
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
1996 Sep 03
3
Philips Semiconductors
Product specification
High-speed double diode
1PS184
ELECTRICAL CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
V
F
forward voltage
see Fig.3
I
F
= 1 mA
610
-
mV
I
F
= 10 mA
740
-
mV
I
F
= 50 mA
-
1.0
V
I
F
= 100 mA
-
1.2
V
I
R
reverse current
see Fig.4
V
R
= 25 V
-
30
nA
V
R
= 80 V
-
0.5
A
V
R
= 25 V; T
j
= 150
C
-
30
A
V
R
= 80 V; T
j
= 150
C
-
100
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.5
-
1.5
pF
t
rr
reverse recovery time
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA; see Fig.6
-
4
ns
V
fr
forward recovery voltage
when switched from I
F
= 10 mA;
t
r
= 20 ns; see Fig.7
-
1.75
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
250
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
1996 Sep 03
4
Philips Semiconductors
Product specification
High-speed double diode
1PS184
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
0
200
300
0
100
200
MBD033
100
I F
(mA)
T ( C)
amb
o
single diode loaded
double diode loaded
(1) T
j
= 150
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
Fig.3
Forward current as a function of forward
voltage.
handbook, halfpage
0
2
300
IF
(mA)
0
100
200
MBG382
1
VF (V)
(1)
(3)
(2)
handbook, halfpage
10
2
10
200
0
MBG380
100
Tj (
o
C)
IR
(
A)
1
10
2
10
1
(1)
(2)
(3)
Fig.4
Reverse current as a function of junction
temperature.
(1) V
R
= 80 V; maximum values.
(2) V
R
= 80 V; typical values.
(3) V
R
= 25 V; typical values.
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
8
16
12
4
0.8
0.6
0
0.4
0.2
MBG446
VR (V)
Cd
(pF)
1996 Sep 03
5
Philips Semiconductors
Product specification
High-speed double diode
1PS184
Fig.6 Reverse recovery voltage test circuit and waveforms.
handbook, full pagewidth
t rr
(1)
I F
t
output signal
t r
t
t p
10%
90%
VR
input signal
V = V I x R
R
F
S
R = 50
S
IF
D.U.T.
R = 50
i
SAMPLING
OSCILLOSCOPE
MGA881
(1) I
R
= 1 mA.
Fig.7 Forward recovery voltage test circuit and waveforms.
t r
t
t p
10%
90%
I
input
signal
R = 50
S
I
R = 50
i
OSCILLOSCOPE
1 k
450
D.U.T.
MGA882
V fr
t
output
signal
V
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