1999 Apr 26
2
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
1PS70SB10; 1PS70SB14;
1PS70SB15; 1PS70SB16
FEATURES
Low forward voltage
Guard ring protected
Very small plastic SMD package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT323 very small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
PINNING
PIN
1PS70SB..
10
14
15
16
1
a
1
a
1
a
1
k
1
2
n.c.
k
2
a
2
k
2
3
k
1
k
1
, a
2
k
1
, k
2
a
1
, a
2
Fig.1
Simplified outline
SOT323 (SC-70) and
pin configuration.
halfpage
MGD765
Top view
2
1
3
Fig.2
1PS70SB10 single
diode configuration
(symbol).
3
1
2
n.c.
MLC357
Fig.3
1PS70SB14 diode
configuration (symbol).
3
1
2
MLC358
Fig.4
1PS70SB15 diode
configuration (symbol).
3
1
2
MLC359
Fig.5
1PS70SB16 diode
configuration (symbol).
3
1
2
MLC360
MARKING
Note
1.
= -: Made in Hong Kong.
= t: Made in Malaysia.
TYPE NUMBER
MARKING
CODE
(1)
1PS70SB10
7
0
1PS70SB14
7
4
1PS70SB15
7
5
1PS70SB16
7
6
1999 Apr 26
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
1PS70SB10; 1PS70SB14;
1PS70SB15; 1PS70SB16
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
= 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323 (SC70) standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
R
continuous reverse voltage
-
30
V
I
F
continuous forward current
-
200
mA
I
FRM
repetitive peak forward current
t
p
1 s;
0.5
-
300
mA
I
FSM
non-repetitive peak forward current
t
p
< 10 ms
-
600
mA
P
tot
total power dissipation (per package)
T
amb
< 25
C
-
200
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
125
C
T
amb
operating ambient temperature
-
65
+125
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V
F
continuous forward voltage
see Fig.6
I
F
= 0.1 mA
240
mV
I
F
= 1 mA
320
mV
I
F
= 10 mA
400
mV
I
F
= 30 mA
500
mV
I
F
= 100 mA
800
mV
I
R
continuous reverse current
V
R
= 25 V; note 1; see Fig.7
2
A
C
d
diode capacitance
V
R
= 1 V; f = 1 MHz; see Fig.8
10
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
625
K/W
1999 Apr 26
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
1PS70SB10; 1PS70SB14;
1PS70SB15; 1PS70SB16
GRAPHICAL DATA
Fig.6
Forward current as a function of forward
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
10
IF
VF (V)
3
10
(mA)
2
10
1
10
1
1.2
0.8
0.4
0
MSA892
(3)
(2)
(1)
(3)
(2)
(1)
Fig.7
Reverse current as a function of reverse
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
0
10
20
30
V (V)
R
10
3
I
R
(
A)
10
2
10
1
10
1
(1)
(2)
(3)
MSA893
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
amb
= 25
C.
0
10
20
30
0
5
10
15
V (V)
R
C d
(pF)
MSA891
1999 Apr 26
5
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
1PS70SB10; 1PS70SB14;
1PS70SB15; 1PS70SB16
PACKAGE OUTLINE
UNIT
A1
max
bp
c
D
E
e1
HE
Lp
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
0.65
e
1.3
2.2
2.0
0.23
0.13
0.2
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323
SC-70
w
M
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
v
M
A
A
B
y
0
1
2 mm
scale
A
X
1
2
3
Plastic surface mounted package; 3 leads
SOT323
97-02-28
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