1999 Apr 26
2
Philips Semiconductors
Product specification
Schottky barrier diode
1PS74SB23
FEATURES
Ultra fast switching speed
Low forward voltage
Fast recovery time
Guard ring protected
Small plastic SMD package
Capability of absorbing very high
surge current.
APPLICATIONS
Rectification
Circuit protection
Polarity protection
Switched-mode power supplies.
DESCRIPTION
Planar Schottky barrier diode
encapsulated in an SC-74 (SOT457)
small plastic SMD package.
PINNING
PIN
DESCRIPTION
1
anode
2
cathode
3
anode
4
anode
5
cathode
6
anode
Fig.1 Simplified outline SC-74 (SOT457) and symbol.
Marking code: P1.
handbook, halfpage
MAM421
Top view
1, 3,
4, 6
2, 5
1
3
2
4
5
6
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Pins 1, 3, 4 and 6 are connected in parallel; pins 2 and 5 are connected in parallel.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
25
V
I
F
continuous forward current
-
1
A
I
FSM
non-repetitive peak forward current
t
p
=
8.3 ms; half sinewave;
JEDEC method; note 1
-
25
A
I
RSM
non-repetitive peak reverse current
t
p
= 100
s
-
0.5
A
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
125
C
1999 Apr 26
3
Philips Semiconductors
Product specification
Schottky barrier diode
1PS74SB23
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
= 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SC-74 (SOT457) standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 100 mA
260
300
mV
I
F
= 1 A
400
450
mV
I
R
reverse current
V
R
= 20 V; note 1; see Fig.3
80
500
A
V
R
= 25 V; note 1; see Fig.3
-
1
mA
C
d
diode capacitance
f = 1 MHz; V
R
= 4 V; see Fig.4
100
-
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
250
K/W
1999 Apr 26
4
Philips Semiconductors
Product specification
Schottky barrier diode
1PS74SB23
GRAPHICAL DATA
Fig.2
Forward current as a function of forward
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 100
C.
(3) T
amb
= 75
C.
(4) T
amb
= 25
C.
handbook, halfpage
1.0
VF (V)
IF
(mA)
0
0.2
0.4
0.6
0.8
10
4
10
3
10
2
10
1
MBK572
(1)
(2)
(3)
(4)
Fig.3
Reverse current as a function of reverse
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 100
C.
(3) T
amb
= 75
C.
(4) T
amb
= 25
C.
handbook, halfpage
30
VR (V)
IR
(mA)
0
10
20
10
4
10
3
10
2
10
1
MBK573
(1)
(2)
(3)
(4)
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
amb
= 25
C.
handbook, halfpage
30
VR (V)
Cd
(pF)
0
10
20
10
3
10
2
10
MBK571
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