DATA SHEET
Product specification
Supersedes data of 1997 Nov 07
1999 Apr 26
DISCRETE SEMICONDUCTORS
1PS75SB45
Schottky barrier double diode
M3D173
1999 Apr 26
2
Philips Semiconductors
Product specification
Schottky barrier double diode
1PS75SB45
FEATURES
Low forward voltage
Guard ring protected
Ultra small plastic SMD package
Low diode capacitance.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier double diode encapsulated in a SOT416 (SC75) ultra
small plastic SMD package.
Fig.1 Simplified outline SOT416; (SC75) and symbol.
Marking code: 45.
handbook, halfpage
1
2
3
MAM377
Top view
1
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
R
continuous reverse voltage
-
40
V
I
F
continuous forward current
-
120
mA
I
FRM
repetitive peak forward current
t
p
1 s;
0.5
-
120
mA
I
FSM
non-repetitive peak forward current
t
p
< 10 ms
-
200
mA
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 26
3
Philips Semiconductors
Product specification
Schottky barrier double diode
1PS75SB45
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
= 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SC75 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V
F
continuous forward voltage
see Fig.2
I
F
= 1 mA
380
mV
I
F
= 10 mA
500
mV
I
F
= 40 mA
1
V
I
R
continuous reverse current
V
R
= 30 V; note 1; see Fig.3
1
A
V
R
= 40 V; note 1; see Fig.3
10
A
charge carrier life time
I
F
= 5 mA; Krakauer method
100
ps
C
d
diode capacitance
V
R
= 0 ; f = 1 MHz; see Fig.5
5
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
833
K/W
1999 Apr 26
4
Philips Semiconductors
Product specification
Schottky barrier double diode
1PS75SB45
GRAPHICAL DATA
Fig.2
Forward current as a function of forward
voltage; typical values.
(1) T
amb
= 150
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
(4) T
amb
=
-
40
C.
handbook, halfpage
10
2
10
1
10
2
0
MLC361 - 1
0.6
0.8
0.4
0.2
1.0
V (V)
10
1
I F
(mA)
F
(1)
(2)
(3)
(4)
Fig.3
Reverse current as a function of reverse
voltage; typical values.
(1) T
amb
= 150
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
10
3
10
2
10
-
1
10
-
2
10
1
0
MLC362
20
10
40
30
VR (V)
IR
(
A)
(1)
(2)
(3)
Fig.4
Differential forward resistance as a function
of forward current; typical values.
f = 10 kHz.
handbook, halfpage
MLC364
1
10
10
2
1
10
3
10
10
2
10
1
r diff
(
)
I (mA)
F
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
amb
= 25
C.
handbook, halfpage
0
10
20
40
30
5
0
4
MLC363
3
2
1
VR (V)
Cd
(pF)
1999 Apr 26
5
Philips Semiconductors
Product specification
Schottky barrier double diode
1PS75SB45
PACKAGE OUTLINE
UNIT
A1
max
bp
c
D
E
e
1
H
E
L
p
Q
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.1
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
0.5
e
1
1.75
1.45
0.2
v
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.23
0.13
SOT416
SC-75
w
M
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
A
B
B
v
M
A
0
0.5
1 mm
scale
A
0.95
0.60
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT416
97-02-28
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