ChipFind - документация

Электронный компонент: 1PS76SB17/T1

Скачать:  PDF   ZIP

Document Outline

DATA SHEET
Preliminary specification
Supersedes data of 1996 Oct 14
1999 May 25
DISCRETE SEMICONDUCTORS
1PS76SB17
Schottky barrier diode
halfpage
M3D049
1999 May 25
2
Philips Semiconductors
Preliminary specification
Schottky barrier diode
1PS76SB17
FEATURES
Low forward voltage
Low diode capacitance
ESD
>
500 V; Human body model
Very small plastic SMD package.
APPLICATIONS
UHF mixers
Sampling circuits
Modulators
Phase detectors.
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOD323 very small plastic
SMD package.
Fig.1 Simplified outline (SOD323) and symbol.
Marking code: S7.
The marking bar indicates the cathode.
handbook, 4 columns
k
a
MAM283
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD323 standard mounting conditions.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
4
V
I
F
continuous forward current
-
30
mA
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
100
C
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
F
forward voltage
see Fig.2
I
F
= 0.1 mA
-
300
mV
I
F
= 1 mA
360
450
mV
I
F
= 10 mA
470
600
mV
I
R
reverse current
V
R
= 3 V; see Fig.3
0.15
0.25
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0 V; see Fig.4
0.8
1
pF
f = 1 MHz; V
R
= 0.5 V; see Fig.4
0.65
-
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
450
K/W
1999 May 25
3
Philips Semiconductors
Preliminary specification
Schottky barrier diode
1PS76SB17
GRAPHICAL DATA
(1) T
amb
= 100
C.
(2) T
amb
= 60
C.
(3) T
amb
= 25
C.
(4) T
amb
=
-
40
C.
Fig.2
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
10
2
10
1
0
MLC795
600
800
400
200
VF (mV)
10
-
1
10
-
2
IF
(mA)
(1)
(2)
(3)
(4)
(1) T
amb
= 100
C.
(2) T
amb
= 60
C.
(3) T
amb
= 25
C.
(4) T
amb
=
-
40
C.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
10
4
10
3
10
2
10
1
10
1
0
MLC796
2
1
3
V (V)
I R
(nA)
R
(1)
(2)
(3)
(4)
f = 1 MHz; T
amb
= 25
C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
0
1
2
3
4
0.4
0.8
MLC797
0.7
0.6
0.5
V (V)
R
C d
(pF)
1999 May 25
4
Philips Semiconductors
Preliminary specification
Schottky barrier diode
1PS76SB17
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD323
98-09-14
0
1
2 mm
scale
SOD323
UNIT
bp
c
D
E
Q
v
mm
0.40
0.25
+
0.05
-
0.05
0.25
0.10
0.2
1.35
1.15
1.8
1.6
A
1.1
0.8
HE
2.7
2.3
0.25
0.15
Lp
0.45
0.15
DIMENSIONS (mm are the original dimensions)
D
1
2
HE
Lp
A
E
bp
A1
Q
Note
1. The marking bar indicates the cathode.
A1
max.
Plastic surface mounted package; 2 leads
,
v
M
A
A
c
(1)
1999 May 25
5
Philips Semiconductors
Preliminary specification
Schottky barrier diode
1PS76SB17
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.