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Электронный компонент: 1PS79SB10

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DATA SHEET
Product specification
1998 Jul 16
DISCRETE SEMICONDUCTORS
1PS79SB10
Schottky barrier diode
M3D319
1998 Jul 16
2
Philips Semiconductors
Product specification
Schottky barrier diode
1PS79SB10
FEATURES
Low forward voltage
Guard ring protected
Ultra small plastic SMD package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD
package.
Fig.1 Simplified outline (SC-79) and symbol.
Marking code: F.
handbook, halfpage
k
a
Top view
MAM403
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
30
V
I
F
continuous forward current
-
200
mA
I
FRM
repetitive peak forward current
t
p
1 s;
0.5
-
300
mA
I
FSM
non-repetitive peak forward current
t
p
< 10 ms
-
600
mA
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
125
C
T
amb
operating ambient temperature
-
65
+125
C
1998 Jul 16
3
Philips Semiconductors
Product specification
Schottky barrier diode
1PS79SB10
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulsed test: t
p
= 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SC-79 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
continuous forward voltage
see Fig.2
I
F
= 0.1 mA
240
mV
I
F
= 1 mA
320
mV
I
F
= 10 mA
400
mV
I
F
= 30 mA
500
mV
I
F
= 100 mA
800
mV
I
R
continuous reverse current
V
R
= 25 V; note 1; see Fig.3
2
A
C
d
diode capacitance
V
R
= 1 V; f = 1 MHz; see Fig.4
10
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
450
K/W
1998 Jul 16
4
Philips Semiconductors
Product specification
Schottky barrier diode
1PS79SB10
GRAPHICAL DATA
Fig.2
Forward current as a function of forward
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
10
IF
VF (V)
3
10
(mA)
2
10
1
10
1
1.2
0.8
0.4
0
MSA892
(3)
(2)
(1)
(3)
(2)
(1)
Fig.3
Reverse current as a function of reverse
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
0
10
20
30
V (V)
R
10
3
I
R
(
A)
10
2
10
1
10
1
(1)
(2)
(3)
MSA893
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
amb
= 25
C.
0
10
20
30
0
5
10
15
V (V)
R
C d
(pF)
MSA891
1998 Jul 16
5
Philips Semiconductors
Product specification
Schottky barrier diode
1PS79SB10
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD523
SC-79
98-11-25
Plastic surface mounted package; 2 leads
SOD523
0
0.5
1 mm
scale
D
1
2
HE
E
bp
A
c
v
M
A
A
UNIT
bp
c
D
E
v
mm
0.35
0.25
0.2
0.1
0.15
0.9
0.7
1.3
1.1
A
0.7
0.5
HE
1.7
1.5
DIMENSIONS (mm are the original dimensions)
Note
1. The marking bar indicates the cathode.
(1)