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Электронный компонент: 1PS89SB74

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DATA SHEET
Product specification
2001 Apr 20
DISCRETE SEMICONDUCTORS
1PS89SB74
Schottky barrier double diode
M3D425
2001 Apr 20
2
Philips Semiconductors
Product specification
Schottky barrier double diode
1PS89SB74
FEATURES
Low forward voltage
High breakdown voltage
Guard ring protected
Ultra small plastic SMD package
Low capacitance.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOT490
(SC-89) ultra small plastic SMD package.
PINNING
PIN
DESCRIPTION
1
anode (a
1
)
2
cathode (k
2
)
3
common (k
1
, a
2
)
fpage
1
2
Top view
MBK837
3
3
1
2
MLC358
Fig.1
Simplified outline (SOT490; SC-89) and
symbol.
Marking code: S7.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode unless otherwise specified
V
R
continuous reverse voltage
-
70
V
I
F
continuous forward current
-
70
mA
I
FRM
repetitive peak forward current
t
p
1 s;
0.5
-
70
mA
I
FSM
non-repetitive peak forward current
t
p
< 10 ms
-
100
mA
P
tot
total power dissipation (per package)
T
amb
25
C
-
200
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
+150
C
T
amb
operating ambient temperature
-
65
+150
C
2001 Apr 20
3
Philips Semiconductors
Product specification
Schottky barrier double diode
1PS89SB74
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT490 (SC-89) standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V
F
continuous forward voltage
see Fig.2;
I
F
= 1 mA
410
mV
I
F
= 10 mA
750
mV
I
F
= 15 mA
1
V
I
R
continuous reverse current
V
R
= 50 V; see Fig.3; note 1
100
nA
V
R
= 70 V; see Fig.3; note 1
10
A
C
d
diode capacitance
V
R
= 0; f = 1 MHz; see Fig.4
2
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient note 1
500
K/W
2001 Apr 20
4
Philips Semiconductors
Product specification
Schottky barrier double diode
1PS89SB74
GRAPHICAL DATA
10
0
0.2
0.4
0.6
0.8
1
1
I F
(mA)
V (V)
F
MRA803
(1)
(4)
(2)
(3)
10
2
10
1
10
2
Fig.2
Forward current as a function of forward
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
(4) T
amb
=
-
40
C.
MRA805
1
10
10
0
20
40
60
80
V (V)
R
IR
(
A)
(1)
(3)
(2)
2
10
1
10
2
10
3
Fig.3
Reverse current as a function of reverse
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
0
0.5
1
1.5
2
0
20
40
60
80
MRA804
Cd
(pF)
V (V)
R
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
amb
= 25
C.
2001 Apr 20
5
Philips Semiconductors
Product specification
Schottky barrier double diode
1PS89SB74
PACKAGE OUTLINE
UNIT
b
p
c
D
E
e
1
H
E
L
p
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
98-10-23
IEC
JEDEC
EIAJ
mm
0.33
0.23
0.2
0.1
1.7
1.5
0.95
0.75
0.5
e
1.0
1.7
1.5
0.1
0.1
DIMENSIONS (mm are the original dimensions)
0.5
0.3
SOT490
SC-89
bp
D
e1
e
A
Lp
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
0.8
0.6
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT490