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Электронный компонент: 1PS89SS06

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DATA SHEET
Product specification
File under Discrete Semiconductors, SC13b
April 1995
DISCRETE SEMICONDUCTORS
BSP225
P-channel enhancement mode
vertical D-MOS transistor
April 1995
2
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP225
FEATURES
Low R
DS(on)
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No secondary breakdown.
DESCRIPTION
P-channel enhancement mode
vertical D-MOS transistor in a
miniature SOT223 envelope,
intended for use in relay, high-speed
and line transformer drivers.
PINNING - SOT223
PIN
DESCRIPTION
1
gate
2
drain
3
source
4
drain
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
-
V
DS
drain-source voltage
250
V
-
I
D
drain current
DC value
225
mA
R
DS(on)
drain-source on-resistance
-
I
D
= 200 mA
-
V
GS
= 10 V
15
-
V
GS(th)
gate-source threshold voltage
-
I
D
= 1 mA
V
GS
= V
DS
2.8
V
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM121
4
1
2
3
Top view
s
d
g
April 1995
3
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP225
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain lead minimum 6 cm
2
.
THERMAL RESISTANCE
Note
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain lead minimum 6 cm
2
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-
V
DS
drain-source voltage
-
250
V
V
GSO
gate-source voltage
open drain
-
20
V
-
I
D
drain current
DC value
-
225
mA
-
I
DM
drain current
peak value
-
600
mA
P
tot
total power dissipation
up to T
amb
= 25
C (note 1)
-
1.5
W
T
stg
storage temperature range
-
65
150
C
T
j
junction temperature
-
150
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
from junction to ambient (note 1)
83.3
K/W
April 1995
4
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP225
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
-
V
(BR)DSS
drain-source breakdown voltage
-
I
D
= 10
A
V
GS
= 0
250
-
-
V
-
I
DSS
drain-source leakage current
-
V
DS
= 200 V
V
GS
= 0
-
-
1
A
I
GSS
gate-source leakage current
V
DS
= 0
V
GS
= 20 V
-
-
100
nA
-
V
GS(th)
gate-source threshold voltage
-
I
D
= 1 mA
V
GS
= V
DS
0.8
-
2.8
V
R
DS(on)
drain-source on-resistance
-
I
D
= 200 mA
-
V
GS
= 10 V
-
10
15
Y
fs
transfer admittance
-
I
D
= 200 mA
-
V
DS
= 25 V
100
200
-
mS
C
iss
input capacitance
-
V
DS
= 25 V
-
V
GS
= 0
f = 1 MHz
-
65
90
pF
C
oss
output capacitance
-
V
DS
= 25 V
-
V
GS
= 0
f = 1 MHz
-
20
30
pF
C
rss
feedback capacitance
-
V
DS
= 25 V
-
V
GS
= 0
f = 1 MHz
-
6
15
pF
Switching times (see Figs 2 and 3)
t
on
turn-on time
-
I
D
= 250 mA
-
V
DD
= 50 V
-
V
GS
= 0 to 10 V
-
5
10
ns
t
off
turn-off time
-
I
D
= 250 mA
-
V
DD
= 50 V
-
V
GS
= 0 to 10 V
-
20
30
ns
April 1995
5
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP225
Fig.2 Switching time test circuit.
handbook, halfpage
MBB689
50
VDD =
-
50 V
ID
0 V
-
10 V
Fig.3 Input and output waveforms.
handbook, halfpage
MBB690
10 %
90 %
90 %
10 %
ton
toff
OUTPUT
INPUT
Fig.4 Power derating curve.
handbook,
0
50
100
200
2
0
1.6
150
1.2
0.8
0.4
MBB693
Ptot
(W)
Tamb (
C)
Fig.5 Typical output characteristics; T
j
= 25
C.
handbook, halfpage
0
-
25
-
1
0
-
0.2
-
0.4
-
0.6
-
0.8
-
5
-
10
-
15
ID
(A)
-
20
MDA706
VDS (V)
VGS =
-
10 V
-
4 V
-
3 V
-
6 V
-
5 V