ChipFind - документация

Электронный компонент: 2N2484

Скачать:  PDF   ZIP

Document Outline

DATA SHEET
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 01
DISCRETE SEMICONDUCTORS
2N2484
NPN general purpose transistor
M3D125
1997 May 01
2
Philips Semiconductors
Product specification
NPN general purpose transistor
2N2484
FEATURES
Low current (max. 50 mA)
Low voltage (max. 60 V)
APPLICATIONS
General purpose switching and amplification
High performance (low-level), low-noise amplifier
applications both for direct current and frequencies
up to 100 MHz.
DESCRIPTION
NPN transistor in a TO-18; SOT18 metal package.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
collector, connected to the case
Fig.1
Simplified outline (TO-18; SOT18)
and symbol.
handbook, halfpage
MAM264
1
3
2
3
1
2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
60
V
V
CEO
collector-emitter voltage
open base
-
-
60
V
I
CM
peak collector current
-
-
100
mA
P
tot
total power dissipation
T
amb
25
C
-
-
360
mW
h
FE
DC current gain
I
C
= 10
A; V
CE
= 5 V
100
-
500
I
C
= 1 mA; V
CE
= 5 V
250
-
-
I
C
= 10 mA; V
CE
= 5 V
-
-
800
f
T
transition frequency
I
C
= 0.5 mA; V
CE
= 5 V; f = 100 MHz 60
80
-
MHz
1997 May 01
3
Philips Semiconductors
Product specification
NPN general purpose transistor
2N2484
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
60
V
V
CEO
collector-emitter voltage
open base
-
60
V
V
EBO
emitter-base voltage
open collector
-
6
V
I
C
collector current (DC)
-
50
mA
I
CM
peak collector current
-
100
mA
I
BM
peak base current
-
50
mA
P
tot
total power dissipation
T
amb
25
C
-
360
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
200
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
480
K/W
R
th j-c
thermal resistance from junction to case
150
K/W
1997 May 01
4
Philips Semiconductors
Product specification
NPN general purpose transistor
2N2484
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.01.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 45 V
-
-
10
nA
I
E
= 0; V
CB
= 45 V; T
j
= 150
C
-
-
10
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
-
-
10
nA
h
FE
DC current gain
I
C
= 1
A; V
CE
= 5 V
30
-
-
I
C
= 10
A; V
CE
= 5 V
100
-
500
I
C
= 10
A; V
CE
= 5 V; T
j
= 55
C
20
-
-
I
C
= 100
A; V
CE
= 5 V
175
-
-
I
C
= 500
A; V
CE
= 5 V
200
-
-
I
C
= 1 mA; V
CE
= 5 V
250
-
-
I
C
= 10 mA; V
CE
= 5 V; note 1
-
-
800
V
CEsat
collector-emitter saturation voltage I
C
= 1 mA; I
B
= 0.1 mA
-
-
350
mV
V
BE
base-emitter voltage
I
C
= 0.1 mA; V
CE
= 5 V
500
-
700
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
-
-
6
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
9
-
pF
f
T
transition frequency
I
C
= 50
A; V
CE
= 5 V; f = 100 MHz
15
-
-
MHz
I
C
= 500
A; V
CE
= 5 V; f = 100 MHz
60
80
-
MHz
F
noise figure
I
C
= 10
A; V
CE
= 5 V; R
S
= 10 k
f = 100 Hz; B = 20 Hz
-
-
10
dB
f = 1 kHz; B = 200 Hz
-
-
3
dB
f = 10 kHz; B = 2 kHz
-
-
2
dB
Wide band; B = 15.7 kHz
-
-
3
dB
1997 May 01
5
Philips Semiconductors
Product specification
NPN general purpose transistor
2N2484
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT18/13
TO-18
B11/C7 type 3
97-04-18
a
k
D
A
L
seating plane
b
D
1
0
5
10 mm
scale
Metal-can cylindrical single-ended package; 3 leads
SOT18/13
w
A
M
M
B
M
A
1
2
3
j
B
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
w
mm
5.31
4.74
0.47
0.41
5.45
5.30
4.70
4.55
1.03
0.94
1.1
0.9
15.0
12.7
0.40
45
A
a
b
D
D1
j
k
L
2.54