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Электронный компонент: 2N2907A

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DATA SHEET
Product specification
Supersedes data of 2001 Oct 12
2002 Mar 04
DISCRETE SEMICONDUCTORS
BAT54 series
Schottky barrier (double) diodes
ook, halfpage
M3D088
2002 Mar 04
2
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT54 series
FEATURES
Low forward voltage
Guard ring protected
Small plastic SMD package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes encapsulated in a SOT23
small plastic SMD package. Single diodes and double
diodes with different pinning are available.
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
= W: Made in China.
PINNING
TYPE NUMBER
MARKING CODE
(1)
BAT54
L4
BAT54A
L42 or
V3
BAT54C
L43 or
W1
BAT54S
L44 or
V4
PIN
DESCRIPTION
BAT54
BAT54A
BAT54C
BAT54S
1
a
k
1
a
1
a
1
2
n.c.
k
2
a
2
k
2
3
k
a
1
, a
2
k
1
, k
2
k
1
, a
2
handbook, 2 columns
2
1
3
MGC421
Top view
Fig.1
Simplified outline (SOT23) and pin
configuration.
3
1
2
MLC360
3
1
2
MLC359
3
1
2
MLC358
Fig.2 Diode configuration and symbol.
3
1
2
n.c.
MLC357
(1) BAT54
(2) BAT54A
(3) BAT54C
(4) BAT54S
2002 Mar 04
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT54 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 standard mounting conditions.
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
R
continuous reverse voltage
-
30
V
I
F
continuous forward current
-
200
mA
I
FRM
repetitive peak forward current
t
p
1 s;
0.5
-
300
mA
I
FSM
non-repetitive peak forward current
t
p
< 10 ms
-
600
mA
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
125
C
Per device
P
tot
total power dissipation
T
amb
25
C
-
230
mW
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to
ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V
F
forward voltage
see Fig.3
I
F
= 0.1 mA
240
mV
I
F
= 1 mA
320
mV
I
F
= 10 mA
400
mV
I
F
= 30 mA
500
mV
I
F
= 100 mA
800
mV
I
R
reverse current
V
R
= 25 V; see Fig.4
2
A
t
rr
reverse recovery time
when switched from I
F
= 10 mA
to I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA;
see Fig.6
5
ns
C
d
diode capacitance
f = 1 MHz; V
R
= 1 V; see Fig.5
10
pF
2002 Mar 04
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT54 series
handbook, halfpage
10
IF
VF (V)
3
10
(mA)
2
10
1
10
1
1.2
0.8
0.4
0
MSA892
(3)
(2)
(1)
(3)
(2)
(1)
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
Fig.3
Forward current as a function of forward
voltage; typical values.
0
10
20
30
V (V)
R
10
3
I
R
(
A)
10
2
10
1
10
1
(1)
(2)
(3)
MSA893
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
Fig.4
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
0
10
20
30
0
5
10
15
VR (V)
Cd
(pF)
MSA891
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
amb
= 25
C.
Fig.6 Reverse recovery definitions.
handbook, halfpage
90%
10%
tf
Q
dI
dt
t
IF
IR
MRC129 - 1
F
r
2002 Mar 04
5
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT54 series
PACKAGE OUTLINE
UNIT
A
1
max.
b
p
c
D
E
e
1
H
E
L
p
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
IEC
JEDEC
EIAJ
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
1.1
0.9
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT23