Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- PINNING
- QUICK REFERENCE DATA
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jun 19
DISCRETE SEMICONDUCTORS
2N4036
PNP switching transistor
book, halfpage
M3D111
1997 Jun 19
2
Philips Semiconductors
Product specification
PNP switching transistor
2N4036
FEATURES
High current (max. 1 A)
Low voltage (max. 65 V).
APPLICATIONS
Amplifier and switching applications.
DESCRIPTION
PNP switching transistor in a TO-39 metal package.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
collector, connected to case
Fig.1 Simplified outline (TO-39) and symbol.
handbook, halfpage
3
1
2
MAM318
1
2
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
90
V
V
CEO
collector-emitter voltage
open base
-
-
65
V
I
C
collector current (DC)
-
-
1
A
P
tot
total power dissipation
T
mb
25
C
-
7
W
h
FE
DC current gain
I
C
=
-
150 mA; V
CE
=
-
2 V
20
200
f
T
transition frequency
I
C
=
-
50 mA; V
CE
=
-
10 V; f = 100 MHz
60
-
MHz
t
off
turn-off time
I
Con
=
-
150 mA; I
Bon
=
-
15 mA; I
Boff
= 15 mA
-
700
ns
1997 Jun 19
3
Philips Semiconductors
Product specification
PNP switching transistor
2N4036
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
90
V
V
CEO
collector-emitter voltage
open base
-
-
65
V
V
EBO
emitter-base voltage
open collector
-
-
7
V
I
C
collector current (DC)
-
-
1
A
I
CM
peak collector current
-
-
1
A
I
BM
peak base current
-
-
500
mA
P
tot
total power dissipation
T
mb
25
C
-
7
W
T
stg
storage temperature
-
55
+200
C
T
j
junction temperature
-
200
C
T
amb
operating ambient temperature
-
55
+200
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-c
thermal resistance from junction to case
in free air
25
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
60 V
-
-
50
nA
I
E
= 0; V
CB
=
-
60 V; T
amb
= 150
C
-
-
5
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
4 V
-
-
50
nA
h
FE
DC current gain
I
C
=
-
0.1 mA; V
CE
=
-
10 V
20
-
I
C
=
-
150 mA; V
CE
=
-
2 V
20
200
I
C
=
-
150 mA; V
CE
=
-
10 V
40
140
I
C
=
-
150 mA; V
CE
=
-
10 V;
T
amb
= 55
C
20
-
V
CEsat
collector-emitter saturation voltage
I
C
=
-
150 mA; I
B
=
-
15 mA
-
-
650
mV
V
BEsat
base-emitter saturation voltage
I
C
=
-
150 mA; I
B
=
-
15 mA
-
-
1.4
V
V
BEon
base-emitter on-stage voltage
I
C
=
-
150 mA; V
CE
=
-
10 V
-
-
1.5
V
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
=
-
10 V; f = 1 MHz
-
30
pF
f
T
transition frequency
I
C
=
-
50 mA; V
CE
=
-
10 V; f = 100 MHz 60
-
MHz
Switching times (between 10% and 90% levels)
t
on
turn-on time
I
Con
=
-
150 mA; I
Bon
=
-
15 mA;
I
Boff
= 15 mA
-
110
ns
t
r
rise time
-
70
ns
t
off
turn-off time
-
700
ns
t
s
storage time
-
600
ns
t
f
fall time
-
100
ns
1997 Jun 19
4
Philips Semiconductors
Product specification
PNP switching transistor
2N4036
PACKAGE OUTLINE
UNIT
a
b
D
D
1
j
k
L
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
6.60
6.35
0.48
0.41
9.39
9.08
8.33
8.18
0.85
0.75
0.95
0.75
14.2
12.7
0.2
45
DIMENSIONS (mm are the original dimensions)
SOT5/11
TO-39
97-04-11
k
j
D
A
L
seating plane
b
D
1
0
5
10 mm
scale
A
5.08
Metal-can cylindrical single-ended package; 3 leads
SOT5/11
A
w
A
M
M
B
M
B
a
1
2
3
1997 Jun 19
5
Philips Semiconductors
Product specification
PNP switching transistor
2N4036
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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