DATA SHEET
Product specification
Supersedes data of 1997 May 22
1999 Apr 08
DISCRETE SEMICONDUCTORS
2N5401
PNP high-voltage transistor
book, halfpage
M3D186
1999 Apr 08
2
Philips Semiconductors
Product specification
PNP high-voltage transistor
2N5401
FEATURES
Low current (max. 300 mA)
High voltage (max. 150 V).
APPLICATIONS
General purpose switching and amplification
Telephony applications.
DESCRIPTION
PNP high-voltage transistor in a TO-92; SOT54 plastic
package. NPN complement: 2N5551.
PINNING
PIN
DESCRIPTION
1
collector
2
base
3
emitter
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM280
1
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
160
V
V
CEO
collector-emitter voltage
open base
-
-
150
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
300
mA
I
CM
peak collector current
-
-
600
mA
I
BM
peak base current
-
-
100
mA
P
tot
total power dissipation
T
amb
25
C
-
630
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 08
3
Philips Semiconductors
Product specification
PNP high-voltage transistor
2N5401
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
200
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
120 V
-
-
50
nA
I
E
= 0; V
CB
=
-
120 V; T
amb
= 100
C
-
-
50
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
4 V
-
-
50
nA
h
FE
DC current gain
I
C
=
-
1 mA; V
CE
=
-
5 V; see Fig.2
50
-
I
C
=
-
10 mA; V
CE
=
-
5 V; see Fig.2
60
240
I
C
=
-
50 mA; V
CE
=
-
5 V; see Fig.2
50
-
V
CEsat
collector-emitter saturation voltage
I
C
=
-
10 mA; I
B
=
-
1 mA
-
-
200
mV
I
C
=
-
50 mA; I
B
=
-
5 mA
-
-
500
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
=
-
10 V; f = 1 MHz
-
6
pF
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
10 V; f = 100 MHz 100
300
MHz
F
noise figure
I
C
=
-
200
A; V
CE
=
-
5 V; R
S
= 2 k
;
f = 10 Hz to 15.7 kHz
-
8
pF
1999 Apr 08
4
Philips Semiconductors
Product specification
PNP high-voltage transistor
2N5401
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
150
200
50
100
MGD813
-
10
-
1
-
1
-
10
-
10
2
-
10
3
hFE
IC mA
VCE =
-
5 V
1999 Apr 08
5
Philips Semiconductors
Product specification
PNP high-voltage transistor
2N5401
PACKAGE OUTLINE
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1
(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54
TO-92
SC-43
97-02-28
A
L
0
2.5
5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
e1
e
1
2
3
PDF 
ZIP