Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- PINNING
- QUICK REFERENCE DATA
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
File under Discrete Semiconductors, SC04
1997 Jul 04
DISCRETE SEMICONDUCTORS
2N6427
NPN Darlington transistor
book, halfpage
M3D186
1997 Jul 04
2
Philips Semiconductors
Product specification
NPN Darlington transistor
2N6427
FEATURES
High current (max. 500 mA)
Low voltage (max. 30 V)
High DC current gain (min. 10000).
APPLICATIONS
General purpose
High gain amplification.
DESCRIPTION
NPN Darlington transistor in a TO-92; SOT54 plastic
package.
PINNING
PIN
DESCRIPTION
1
collector
2
base
3
emitter
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM252
TR2
2
1
3
TR1
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
40
V
V
CES
collector-emitter voltage
V
BE
= 0
-
30
V
I
C
collector current
-
500
mA
P
tot
total power dissipation
T
amb
25
C
-
625
mW
h
FE
DC current gain
I
C
= 10 mA; V
CE
= 5 V
10000
100000
f
T
transition frequency
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
125
-
MHz
1997 Jul 04
3
Philips Semiconductors
Product specification
NPN Darlington transistor
2N6427
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
40
V
V
CES
collector-emitter voltage
V
BE
= 0
-
30
V
V
EBO
emitter-base voltage
open collector
-
10
V
I
C
collector current (DC)
-
500
mA
I
CM
peak collector current
-
800
mA
I
B
base current (DC)
-
200
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
625
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient note 1
200
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 30 V
-
100
nA
I
E
= 0; V
CB
= 30 V; T
j
= 150
C
-
10
A
I
CES
collector cut-off current
V
BE
= 0; I
B
= 0; V
CE
= 30 V
-
100
nA
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 10 V
-
100
nA
h
FE
DC current gain
V
CE
= 5 V; note 1
I
C
= 10 mA
10000
100000
I
C
= 100 mA
20000
200000
I
C
= 500 mA
14000
140000
V
CEsat
collector-emitter saturation voltage
I
C
= 50 mA; I
B
= 0.5 mA; note 1
-
1.2
V
I
C
= 500 mA; I
B
= 0.5 mA; note 1
-
1.5
V
V
BEsat
base-emitter saturation voltage
I
C
= 500 mA; I
B
= 0.5 mA; note 1
-
2
V
V
BEon
base-emitter on-state voltage
I
C
= 50 mA; V
CE
= 5 V
-
1.75
V
f
T
transition frequency
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz 125
-
MHz
1997 Jul 04
4
Philips Semiconductors
Product specification
NPN Darlington transistor
2N6427
PACKAGE OUTLINE
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1
(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54
TO-92
SC-43
97-02-28
A
L
0
2.5
5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
e1
e
1
2
3
1997 Jul 04
5
Philips Semiconductors
Product specification
NPN Darlington transistor
2N6427
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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