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Электронный компонент: 2N7002F

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2N7002F
TrenchMOSTM Logic Level FET
Rev. 01 -- 11 February 2002
Product data
M3D088
1.
Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOSTM
1
technology.
Product availability:
2N7002F in SOT23.
2.
Features
s
TrenchMOSTM technology
s
Very fast switching
s
Logic level compatible
s
Subminiature surface mount package.
3.
Applications
s
Relay driver
s
High speed line driver
s
Logic level translator.
4.
Pinning information
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Table 1:
Pinning - SOT23, simplified outline and symbol
Pin
Description
Simplified outline
Symbol
1
gate (g)
SOT23
2
source (s)
3
drain (d)
1
2
3
03ab44
d
g
s
03ab30
Philips Semiconductors
2N7002F
TrenchMOSTM Logic Level FET
Product data
Rev. 01 -- 11 February 2002
2 of 11
9397 750 09096
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
V
DS
drain-source voltage (DC)
T
j
= 25 to 150
C
-
60
V
I
D
drain current (DC)
T
sp
= 25
C; V
GS
= 10 V
-
475
mA
P
tot
total power dissipation
T
sp
= 25
C
-
0.83
W
T
j
junction temperature
-
150
C
R
DSon
drain-source on-state resistance
V
GS
= 10 V; I
D
= 500 mA; T
j
= 25
1.7
2
V
GS
= 4.5 V; I
D
= 75 mA; T
j
= 25
2.25
4
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V
DS
drain-source voltage (DC)
T
j
= 25 to 150
C
-
60
V
V
DGR
drain-gate voltage (DC)
T
j
= 25 to 150
C; R
GS
= 20 k
-
60
V
V
GS
gate-source voltage (DC)
-
30
V
V
GSM
peak gate-source voltage
t
p
50
s; pulsed; duty cycle = 25%
-
40
V
I
D
drain current (DC)
T
sp
= 25
C; V
GS
= 10 V;
Figure 2
and
3
-
475
mA
T
sp
= 100
C; V
GS
= 10 V;
Figure 2
-
300
mA
I
DM
peak drain current
T
sp
= 25
C; pulsed; t
p
10
s;
Figure 3
-
1.9
A
P
tot
total power dissipation
T
sp
= 25
C;
Figure 1
-
0.83
W
T
stg
storage temperature
-
65
+150
C
T
j
operating junction temperature
-
65
+150
C
Source-drain diode
I
S
source (diode forward) current (DC)
T
sp
= 25
C
-
475
mA
I
SM
peak source (diode forward) current T
sp
= 25
C; pulsed; t
p
10
s
-
1.9
A
Philips Semiconductors
2N7002F
TrenchMOSTM Logic Level FET
Product data
Rev. 01 -- 11 February 2002
3 of 11
9397 750 09096
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
V
GS
4.5 V
Fig 1.
Normalized total power dissipation as a
function of solder point temperature.
Fig 2.
Normalized continuous drain current as a
function of solder point temperature.
T
sp
= 25
C; I
DM
is single pulse; V
GS
= 10 V.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa17
0
40
80
120
0
50
100
150
200
Tsp (
o
C)
Pder
(%)
03aa25
0
40
80
120
0
50
100
150
200
Tsp
(
o
C)
Ider
(%)
P
der
P
tot
P
tot 25 C
(
)
-----------------------
100%
=
I
der
I
D
I
D 25 C
(
)
-------------------
100%
=
03ai11
10-2
10-1
1
10
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
RDSon = VDS / ID
1 ms
tp = 10 ms
100 ms
Philips Semiconductors
2N7002F
TrenchMOSTM Logic Level FET
Product data
Rev. 01 -- 11 February 2002
4 of 11
9397 750 09096
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
R
th(j-sp)
thermal resistance from junction to solder point mounted on a metal clad board;
Figure 4
-
-
150
K/W
R
th(j-a)
thermal resistance from junction to ambient
mounted on a printed circuit board;
minimum footprint
-
-
350
K/W
Mounted on metal clad substrate.
Fig 4.
Transient thermal impedance from junction to solder point as a function of pulse duration.
03ai09
10-1
1
10
102
103
10-5
10-4
10-3
10-2
10-1
1
10
tp (s)
Zth(j-sp)
K/W
single pulse
0.2
0.1
0.05
0.02
= 0.5
tp
tp
T
P
t
T
=
Philips Semiconductors
2N7002F
TrenchMOSTM Logic Level FET
Product data
Rev. 01 -- 11 February 2002
5 of 11
9397 750 09096
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
T
j
= 25
C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
I
D
= 10
A; V
GS
= 0 V
T
j
= 25
C
60
75
-
V
T
j
=
-
55
C
55
-
-
V
V
GS(th)
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
C
1
2
-
V
T
j
= 150
C
0.6
-
-
V
T
j
=
-
55
C
-
-
3.5
V
I
DSS
drain-source leakage current
V
DS
= 48 V; V
GS
= 0 V
T
j
= 25
C
-
0.01
1.0
A
T
j
= 150
C
-
-
10
A
I
GSS
gate-source leakage current
V
GS
=
15 V; V
DS
= 0 V
-
10
100
nA
R
DSon
drain-source on-state resistance
V
GS
= 10 V; I
D
= 500 mA;
Figure 7
and
8
T
j
= 25
C
-
1.7
2
T
j
= 150
C
-
-
3.7
V
GS
= 4.5 V; I
D
= 75 mA;
Figure 7
and
8
T
j
= 25
C
-
2.25
4
Dynamic characteristics
g
fs
forward transconductance
V
DS
= 10 V; I
D
= 200 mA
100
300
-
mS
C
iss
input capacitance
V
GS
= 0 V; V
DS
= 10 V; f = 1 MHz;
Figure 11
-
25
40
pF
C
oss
output capacitance
-
18
30
pF
C
rss
reverse transfer capacitance
-
7.5
10
pF
t
on
turn-on time
V
DD
= 50 V; R
D
= 250
; V
GS
= 10 V;
R
G
= 50
; R
GS
= 50
-
3
10
ns
t
off
turn-off time
-
12
15
ns
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 300 mA; V
GS
= 0 V;
Figure 12
-
0.85
1.5
V
t
rr
reverse recovery time
I
S
= 300 mA; dI
S
/dt =
-
100 A/
s; V
GS
= 0 V;
V
DS
= 25 V
-
30
-
ns
Q
r
recovered charge
-
30
-
nC