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Электронный компонент: 2PA1774M

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DATA SHEET
Product specification
2004 Feb 19
DISCRETE SEMICONDUCTORS
2PA1774M series
PNP general purpose transistor
M3D883
BOTTOM VIEW
2004 Feb 19
2
Philips Semiconductors
Product specification
PNP general purpose transistor
2PA1774M series
FEATURES
Leadless ultra small plastic package
(1 mm
0.6 mm
0.5 mm)
Board space 1.3 mm
0.9 mm
Power dissipation comparable to SOT23.
APPLICATIONS
General purpose small signal DC
Low and medium frequency AC applications
Mobile communications, digital (still) cameras, PDAs,
PCMCIA cards.
DESCRIPTION
PNP general purpose transistor in a SOT883 leadless ultra
small plastic package.
NPN complement: 2PC4617M series.
MARKING
QUICK REFERENCE DATA
PINNING
TYPE NUMBER
MARKING CODE
2PA1774QM
PB
2PA1774RM
PA
2PA1774SM
PC
SYMBOL
PARAMETER
MAX.
UNIT
V
CEO
collector-emitter voltage
-
40
V
I
C
collector current (DC)
-
100
mA
I
CM
peak collector current
-
200
mA
PIN
DESCRIPTION
1
base
2
emitter
3
collector
handbook, halfpage
MAM469
2
1
3
Bottom view
2
3
1
Fig.1 Simplified outline (SOT883) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
2PA1774QM
-
leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
SOT883
2PA1774RM
-
2PA1774SM
-
2004 Feb 19
3
Philips Semiconductors
Product specification
PNP general purpose transistor
2PA1774M series
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60
m copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60
m copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm
2
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
50
V
V
CEO
collector-emitter voltage
open base
-
-
40
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
100
mA
I
CM
peak collector current
-
-
200
mA
I
BM
peak base current
-
-
100
mA
P
tot
total power dissipation
T
amb
25
C
note 1
-
250
mW
note 2
-
430
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
in free air
note 1
500
K/W
note 2
290
K/W
2004 Feb 19
4
Philips Semiconductors
Product specification
PNP general purpose transistor
2PA1774M series
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector-base cut-off current
V
CB
=
-
30 V; I
E
= 0
-
-
100
nA
V
CB
=
-
30 V; I
E
= 0; T
j
= 150
C
-
-
5
A
I
EBO
emitter-base cut-off current
V
EB
=
-
4 V; I
C
= 0
-
-
100
nA
h
FE
DC current gain
V
CE
=
-
6 V; I
C
=
-
1 mA
2PA1774QM
120
270
2PA1774RM
180
390
2PA1774SM
270
560
V
CEsat
collector-emitter saturation voltage
I
C
=
-
50 mA; I
B
=
-
5 mA; note 1
-
-
200
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
=
-
12 V; f = 1 MHz
-
2.2
pF
f
T
transition frequency
V
CE
=
-
12 V; I
C
=
-
2 mA;
f = 100 MHz
100
-
MHz
handbook, halfpage
MDB663
IC (mA)
-
10
-
1
-
1
-
10
-
10
2
-
10
3
10
3
hFE
10
2
10
(1)
(2)
(3)
Fig.2 DC current gain; typical values.
V
CE
=
-
6 V.
(1) T
amb
= 150
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
handbook, halfpage
MDB664
VBE
(mV)
-
400
-
200
-
600
-
1000
-
800
-
1200
IC (mA)
-
10
-
1
-
1
-
10
-
10
2
-
10
3
(1)
(2)
(3)
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
V
CE
=
-
6 V.
(1) T
amb
=
-
55
C.
(2) T
amb
= 25
C.
(3) T
amb
= 150
C.
2004 Feb 19
5
Philips Semiconductors
Product specification
PNP general purpose transistor
2PA1774M series
handbook, halfpage
MDB665
IC (mA)
-
10
-
1
-
1
-
10
-
10
2
-
10
3
-
10
3
VCEsat
(mV)
-
10
2
-
10
(1)
(3)
(2)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 10.
(1) T
amb
= 150
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
handbook, halfpage
MDB666
VBEsat
(mV)
-
400
-
200
-
600
-
1000
-
800
-
1200
-
10
-
1
-
1
-
10
-
10
2
IC (mA)
(1)
(3)
(2)
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 10.
(1) T
amb
=
-
55
C.
(2) T
amb
= 25
C.
(3) T
amb
= 150
C.
handbook, halfpage
IC
(A)
0
-
6
-
2
-
8
-
10
VCE (V)
-
4
0
-
0.2
-
0.12
-
0.16
-
0.04
-
0.08
MDB667
(1)
(3)
(4)
(5)
(7)
(8)
(9)
(10)
(6)
(2)
Fig.6
Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
=
-
2.7 mA.
(2) I
B
=
-
2.43 mA.
(3) I
B
=
-
2.16 mA.
(4) I
B
=
-
1.89 mA.
(5) I
B
=
-
1.62 mA.
(6) I
B
=
-
1.35 mA.
(7) I
B
=
-
1.08 mA.
(8) I
B
=
-
0.81 mA.
(9) I
B
=
-
0.54 mA.
(10) I
B
=
-
0.27 mA.
MDB668
IC (mA)
-
10
-
1
-
1
-
10
-
10
2
-
10
3
RCEsat
(
)
10
3
10
2
10
1
(2)
(3)
(1)
Fig.7
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
I
C
/I
B
= 10.
(1) T
amb
= 150
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.