DATA SHEET
Product specification
Supersedes data of 1997 Jun 20
1999 Apr 23
DISCRETE SEMICONDUCTORS
2PD602A
NPN general purpose transistor
book, halfpage
M3D114
1999 Apr 23
2
Philips Semiconductors
Product specification
NPN general purpose transistor
2PD602A
FEATURES
High current (max. 500 mA)
Low voltage (max. 50 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN transistor in an SC-59 plastic package.
PNP complement: 2PB710A.
MARKING
TYPE NUMBER
MARKING CODE
2PD602AQ
XQ
2PD602AR
XR
2PD602AS
XS
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SC-59) and symbol.
handbook, halfpage
1
2
1
3
2
3
MAM321
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
60
V
V
CEO
collector-emitter voltage
open base
-
50
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
500
mA
I
CM
peak collector current
-
1
A
I
BM
peak base current
-
200
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 23
3
Philips Semiconductors
Product specification
NPN general purpose transistor
2PD602A
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 60 V
-
10
nA
I
E
= 0; V
CB
= 60 V; T
j
= 150
C
-
5
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 4 V
-
10
nA
h
FE
DC current gain
I
C
= 150 mA; V
CE
= 10 V; note 1
2PD602AQ
85
170
2PD602AR
120
240
2PD602AS
170
340
DC current gain
I
C
= 500 mA; V
CE
= 10 V; note 1
40
-
V
CEsat
collector-emitter saturation
voltage
I
C
= 300 mA; I
B
= 30 mA; note 1
-
600
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
15
pF
f
T
transition frequency
I
C
= 50 mA; V
CE
= 10 V;
f = 100 MHz; note 1
2PD602AQ
140
-
MHz
2PD602AR
160
-
MHz
2PD602AS
180
-
MHz
1999 Apr 23
4
Philips Semiconductors
Product specification
NPN general purpose transistor
2PD602A
PACKAGE OUTLINE
UNIT
A
1
b
p
c
D
E
e
1
H
E
L
p
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.50
0.35
0.26
0.10
3.1
2.7
1.7
1.3
0.95
e
1.9
3.0
2.5
0.33
0.23
0.2
0.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2
SOT346
TO-236
SC-59
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
1.3
1.0
0.1
0.013
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT346
98-07-17
1999 Apr 23
5
Philips Semiconductors
Product specification
NPN general purpose transistor
2PD602A
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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