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Электронный компонент: 74ABT827N

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Philips
Semiconductors
74ABT827
10-bit buffer/line driver, non-inverting
(3-State)
Product specification
Supersedes data of 1995 Sep 06
1998 Jan 16
INTEGRATED CIRCUITS
IC23 Data Handbook
Philips Semiconductors
Product specification
74ABT827
10-bit buffer/line driver, non-inverting (3-State)
2
1998 Jan 16
853-1618 18866
FEATURES
Ideal where high speed, light loading, or increased fan-in are
required
Flow through pinout architecture for microprocessor oriented
applications
Output capability: +64mA/32mA
Slim 300 mil-wide plastic 24-pin package
Latch-up protection exceeds 500mA per Jedec Std 17
ESD protection exceeds 2000 V per MIL STD 883 Method 3015
and 200 V per Machine Model
Power-up 3-State
Inputs are disabled during 3-State mode
DESCRIPTION
The 74ABT827 high-performance BiCMOS device combines low
static and dynamic power dissipation with high speed and high
output drive.
The 74ABT827 10-bit buffers provide high performance bus
interface buffering for wide data/address paths or buses carrying
parity. They have NOR Output Enables (OE0, OE1) for maximum
control flexibility.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
T
amb
= 25
C; GND = 0V
TYPICAL
UNIT
t
PLH
t
PHL
Propagation delay
An to Yn
C
L
= 50pF; V
CC
= 5V
3.0
ns
C
IN
Input capacitance
V
I
= 0V or V
CC
4
pF
C
OUT
Output capacitance
Outputs disabled;
V
O
= 0V or V
CC
7
pF
I
CCZ
Total supply current
Outputs disabled; V
CC
= 5.5V
500
nA
ORDERING INFORMATION
PACKAGES
TEMPERATURE RANGE
OUTSIDE NORTH AMERICA
NORTH AMERICA
DWG NUMBER
24-Pin Plastic DIP
40
C to +85
C
74ABT827 N
74ABT827 N
SOT222-1
24-Pin plastic SO
40
C to +85
C
74ABT827 D
74ABT827 D
SOT137-1
24-Pin Plastic SSOP Type II
40
C to +85
C
74ABT827 DB
74ABT827 DB
SOT340-1
24-Pin Plastic TSSOP Type I
40
C to +85
C
74ABT827 PW
74ABT827PW DH
SOT355-1
Philips Semiconductors
Product specification
74ABT827
10-bit buffer/line driver, non-inverting (3-State)
1998 Jan 16
3
PIN CONFIGURATION
1
2
3
4
5
6
7
8
9
10
15
16
17
18
19
20
21
22
23
24
OE0
A0
A1
A2
A3
A4
A5
A6
A7
Y7
A8
Y6
Y5
Y4
Y3
Y2
Y1
Y0
VCC
Y8
11
14
A9
Y9
12
13
GND
OE1
TOP VIEW
SA00233
PIN DESCRIPTION
PIN NUMBER
SYMBOL
FUNCTION
1, 13
OE0, OE1
Output enable input
(active-Low)
2, 3, 4, 5, 6,
7, 8, 9, 10, 11
A0-A9
Data inputs
23, 22, 21, 20, 19,
18, 17, 16, 15, 14
Y0-Y9
Data outputs
10
GND
Ground (0V)
20
V
CC
Positive supply voltage
LOGIC SYMBOL (IEEE/IEC)
2
23
3
22
4
21
5
20
6
19
7
18
8
17
9
16
13
&
1
10
15
11
14
EN1
1
SA00235
LOGIC SYMBOL
1
13
OE0
OE1
2
3
4
5
6
7
8
9
10 11
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9
Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9
23 22 21 20 19 18 17 16 15 14
SA00234
FUNCTION TABLE
INPUTS
OUTPUTS
OPERATING
OEn
An
Yn
MODE
L
L
L
Transparent
L
H
H
Transparent
H
X
Z
High impedance
H = High voltage level
L
= Low voltage level
X = Don't care
Z = High impedance "off" state
Philips Semiconductors
Product specification
74ABT827
10-bit buffer/line driver, non-inverting (3-State)
1998 Jan 16
4
LOGIC DIAGRAM
2
A0
Y0
23
1
OE0
3
A1
Y1
22
4
A2
Y2
21
5
A3
Y3
20
6
A4
Y4
19
7
A5
Y5
18
8
A6
Y6
17
9
A7
Y7
16
10
A8
Y8
15
11
A9
Y9
14
13
OE1
SA00236
ABSOLUTE MAXIMUM RATINGS
1, 2
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
V
CC
DC supply voltage
0.5 to +7.0
V
I
IK
DC input diode current
V
I
< 0
18
mA
V
I
DC input voltage
3
1.2 to +7.0
V
I
OK
DC output diode current
V
O
< 0
50
mA
V
OUT
DC output voltage
3
output in Off or High state
0.5 to +5.5
V
I
OUT
DC output current
output in Low state
128
mA
T
stg
Storage temperature range
65 to 150
C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150
C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
LIMITS
UNIT
SYMBOL
PARAMETER
Min
Max
UNIT
V
CC
DC supply voltage
4.5
5.5
V
V
I
Input voltage
0
V
CC
V
V
IH
High-level input voltage
2.0
V
V
IL
Low-level input voltage
0.8
V
I
OH
High-level output current
32
mA
I
OL
Low-level output current
64
mA
t/
v
Input transition rise or fall rate
0
5
ns/V
T
amb
Operating free-air temperature range
40
+85
C
Philips Semiconductors
Product specification
74ABT827
10-bit buffer/line driver, non-inverting (3-State)
1998 Jan 16
5
DC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
T
amb
= +25
C
T
amb
= 40
C
to +85
C
UNIT
Min
Typ
Max
Min
Max
V
IK
Input clamp voltage
V
CC
= 4.5V; I
IK
= 18mA
0.9
1.2
1.2
V
V
CC
= 4.5V; I
OH
= 3mA; V
I
= V
IL
or V
IH
2.5
2.9
2.5
V
V
OH
High-level output voltage
V
CC
= 5.0V; I
OH
= 3mA; V
I
= V
IL
or V
IH
3.0
3.4
3.0
V
V
CC
= 4.5V; I
OH
= 32mA; V
I
= V
IL
or V
IH
2.0
2.4
2.0
V
V
OL
Low-level output voltage
V
CC
= 4.5V; I
OL
= 64mA; V
I
= V
IL
or V
IH
0.42
0.55
0.55
V
I
I
Input leakage current
V
CC
= 5.5V; V
I
= GND or 5.5V
0.01
1.0
1.0
A
I
OFF
Power-off leakage current
V
CC
= 0.0V; V
O
or V
I
4.5V
5.0
100
100
A
I
PU
/I
PD
Power-up/down 3-State
output current
3
V
CC
= 2.0V; V
O
= 0.5V; V
I
= GND or V
CC
;
V
OE
= V
CC
5.0
50
50
A
I
OZH
3-State output High current
V
CC
= 5.5V; V
O
= 2.7V; V
I
= V
IL
or V
IH
5.0
50
50
A
I
OZL
3-State output Low current
V
CC
= 5.5V; V
O
= 0.5V; V
I
= V
IL
or V
IH
5.0
50
50
A
I
CEX
Output HIgh leakage current
V
CC
= 5.5V; V
O
= 5.5V; V
I
= GND or V
CC
5.0
50
50
A
I
O
Output current
1
V
CC
= 5.5V; V
O
= 2.5V
50
80
180
50
180
mA
I
CCH
V
CC
= 5.5V; Outputs High, V
I
= GND or V
CC
0.5
250
250
A
I
CCL
Quiescent supply current
V
CC
= 5.5V; Outputs Low, V
I
= GND or V
CC
25
38
38
mA
I
CCZ
V
CC
= 5.5V; Outputs 3State;
V
I
= GND or V
CC
0.5
250
250
A
Outputs enabled, one input at 3.4V, other
inputs at V
CC
or GND; V
CC
= 5.5V
0.5
1.5
1.5
mA
I
CC
Additional supply current per
input pin
2
Outputs 3-State, one data input at 3.4V, other
inputs at V
CC
or GND; V
CC
= 5.5V
0.01
50
50
mA
Outputs 3State, one enable input at 3.4V,
other inputs at V
CC
or GND; V
CC
= 5.5V
0.5
1.5
1.5
mA
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
3. This parameter is valid for any V
CC
between 0V and 2.1V with a transition time of up to 10msec. For V
CC
= 2.1V to V
CC
= 5V
"
10%, a
transition time of up to 100
sec is permitted.