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Электронный компонент: 74AHC1G32GV

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DATA SHEET
Product specification
Supersedes data of 2002 Mar 26
2002 Jun 05
INTEGRATED CIRCUITS
74AHC1G32; 74AHCT1G32
2-input OR gate
2002 Jun 05
2
Philips Semiconductors
Product specification
2-input OR gate
74AHC1G32; 74AHCT1G32
FEATURES
Symmetrical output impedance
High noise immunity
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
CDM EIA/JESD22-C101 exceeds 1000 V.
Low power dissipation
Balanced propagation delays
Multiple very small 5-pin packages
Output capability: standard
Specified from
-
40 to +125
C.
DESCRIPTION
The 74AHC1G/AHCT1G32 is a high-speed Si-gate CMOS
device.
The 74AHC1G/AHCT1G32 provides the 2-input
OR function.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
C; t
r
= t
f
3.0 ns.
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC
2
f
i
+ (C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. V
I
= GND to V
CC
.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
AHC1G
AHCT1G
t
PHL
/t
PLH
propagation delay A and B to Y C
L
= 15 pF; V
CC
= 5 V
3.2
3.3
ns
C
I
input capacitance
1.5
1.5
pF
C
PD
power dissipation capacitance
C
L
= 50 pF; f = 1 MHz;
notes 1 and 2
16
17
pF
2002 Jun 05
3
Philips Semiconductors
Product specification
2-input OR gate
74AHC1G32; 74AHCT1G32
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level.
INPUTS
OUTPUT
A
B
Y
L
L
L
L
H
H
H
L
H
H
H
H
ORDERING INFORMATION
PINNING
TYPE NUMBER
TEMPERATURE
RANGE
PACKAGE
PINS
PACKAGE
MATERIAL
CODE
MARKING
74AHC1G32GW
-
40 to +125
C
5
SC-88A
plastic
SOT353
AG
74AHCT1G32GW
-
40 to +125
C
5
SC-88A
plastic
SOT353
CG
74AHC1G32GV
-
40 to +125
C
5
SC-74A
plastic
SOT753
A32
74AHCT1G32GV
-
40 to +125
C
5
SC-74A
plastic
SOT753
C32
PIN
SYMBOL
DESCRIPTION
1
B
data input B
2
A
data input A
3
GND
ground (0 V)
4
Y
data output Y
5
V
CC
supply voltage
Fig.1 Pin configuration.
handbook, halfpage
1
2
3
5
4
MNA163
32
VCC
A
Y
GND
B
Fig.2 Logic symbol.
handbook, halfpage
MNA164
B
A
Y
2
1
4
2002 Jun 05
4
Philips Semiconductors
Product specification
2-input OR gate
74AHC1G32; 74AHCT1G32
Fig.3 IEC logic symbol.
handbook, halfpage
MNA165
4
1
2
1
Fig.4 Logic diagram.
handbook, halfpage
MNA166
B
A
Y
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
SYMBOL
PARAMETER
CONDITIONS
74AHC1G
74AHCT1G
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
V
CC
supply voltage
2.0
5.0
5.5
4.5
5.0
5.5
V
V
I
input voltage
0
-
5.5
0
-
5.5
V
V
O
output voltage
0
-
V
CC
0
-
V
CC
V
T
amb
operating ambient
temperature
see DC and AC
characteristics per device
-
40
+25
+125
-
40
+25
+125
C
t
r
, t
f
input rise and fall
times
V
CC
= 3.3
0.3 V
-
-
100
-
-
-
ns/V
V
CC
= 5
0.5 V
-
-
20
-
-
20
ns/V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
supply voltage
-
0.5
+7.0
V
V
I
input voltage
-
0.5
+7.0
V
I
IK
input diode current
V
I
<
-
0.5 V
-
-
20
mA
I
OK
output diode current
V
O
<
-
0.5 V or V
O
> V
CC
+ 0.5 V; note 1
-
20
mA
I
O
output source or sink current
-
0.5 V < V
O
< V
CC
+ 0.5 V
-
25
mA
I
CC
V
CC
or GND current
-
75
mA
T
stg
storage temperature
-
65
+150
C
P
D
power dissipation per package
for temperature range from
-
40 to +125
C
-
250
mW
2002 Jun 05
5
Philips Semiconductors
Product specification
2-input OR gate
74AHC1G32; 74AHCT1G32
DC CHARACTERISTICS
Family 74AHC1G
Over recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
TEST CONDITIONS
T
amb
(
C)
UNIT
OTHER
V
CC
(V)
25
-
40 to +85
-
40 to +125
MIN.
TYP.
MAX.
MIN.
MAX.
MIN.
MAX.
V
IH
HIGH-level input
voltage
2.0
1.5
-
-
1.5
-
1.5
-
V
3.0
2.1
-
-
2.1
-
2.1
-
V
5.5
3.85
-
-
3.85
-
3.85
-
V
V
IL
LOW-level input
voltage
2.0
-
-
0.5
-
0.5
-
0.5
V
3.0
-
-
0.9
-
0.9
-
0.9
V
5.5
-
-
1.65
-
1.65
-
1.65
V
V
OH
HIGH-level output
voltage
V
I
= V
IH
or V
IL
;
I
O
=
-
50
A
2.0
1.9
2.0
-
1.9
-
1.9
-
V
V
I
= V
IH
or V
IL
;
I
O
=
-
50
A
3.0
2.9
3.0
-
2.9
-
2.9
-
V
V
I
= V
IH
or V
IL
;
I
O
=
-
50
A
4.5
4.4
4.5
-
4.4
-
4.4
-
V
V
I
= V
IH
or V
IL
;
I
O
=
-
4.0 mA
3.0
2.58
-
-
2.48
-
2.40
-
V
V
I
= V
IH
or V
IL
;
I
O
=
-
8.0 mA
4.5
3.94
-
-
3.8
-
3.70
-
V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
;
I
O
= 50
A
2.0
-
0
0.1
-
0.1
-
0.1
V
V
I
= V
IH
or V
IL
;
I
O
= 50
A
3.0
-
0
0.1
-
0.1
-
0.1
V
V
I
= V
IH
or V
IL
;
I
O
= 50
A
4.5
-
0
0.1
-
0.1
-
0.1
V
V
I
= V
IH
or V
IL
;
I
O
= 4.0 mA
3.0
-
-
0.36
-
0.44
-
0.55
V
V
I
= V
IH
or V
IL
;
I
O
= 8.0 mA
4.5
-
-
0.36
-
0.44
-
0.55
V
I
LI
input leakage
current
V
I
= V
CC
or GND
5.5
-
-
0.1
-
1.0
-
2.0
A
I
CC
quiescent supply
current
V
I
= V
CC
or GND;
I
O
= 0
5.5
-
-
1.0
-
10
-
40
A
C
I
input capacitance
-
1.5
10
-
10
-
10
pF