2002 Jun 06
2
Philips Semiconductors
Product specification
Single D-type flip-flop; positive-edge
trigger
74AHC1G79; 74AHCT1G79
FEATURES
Symmetrical output impedance
High noise immunity
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
CDM EIA/JESD22-C101 exceeds 1000 V.
Low power dissipation
Balanced propagation delays
Multiple very small 5 pin packages
Output capability: standard
Specified from
-
40 to +125
C.
DESCRIPTION
The 74AHC1G/AHCT1G79 is a high-speed Si-gate CMOS
device.
The 74AHC1G/AHCT1G79 provides a single
positive-edge triggered D-type flip-flop.
Information on the data input is transferred to the Q output
on the LOW-to-HIGH transition of the clock pulse. The
D input must be stable one set-up time prior to the
LOW-to-HIGH clock transition for predictable operation.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
C; t
r
= t
f
3.0 ns.
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC
2
f
i
+ (C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC
.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
AHC1G
AHCT1G
t
PHL
/t
PLH
propagation delay CP to Q
C
L
= 15 pF; V
CC
= 5 V
3.5
3.5
ns
C
I
input capacitance
1.5
1.5
pF
C
PD
power dissipation capacitance
C
L
= 50 pF; f = 1 MHz;
notes 1 and 2
15
16
pF
2002 Jun 06
3
Philips Semiconductors
Product specification
Single D-type flip-flop; positive-edge
trigger
74AHC1G79; 74AHCT1G79
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level;
= LOW-to-HIGH CP transition;
X = don't care;
Q + 1 = state after the next LOW-to-HIGH CP transition.
INPUTS
OUTPUT
CP
D
Q + 1
L
L
H
H
L
X
Q
ORDERING INFORMATION
PINNING
TYPE NUMBER
PACKAGE
TEMPERATURE
RANGE
PINS
PACKAGE
MATERIAL
CODE
MARKING
74AHC1G79GW
-
40 to +125
C
5
SC-88A
plastic
SOT353
AP
74AHCT1G79GW
-
40 to +125
C
5
SC-88A
plastic
SOT353
CP
74AHC1G79GV
-
40 to +125
C
5
SC-74A
plastic
SOT753
A79
74AHCT1G79GV
-
40 to +125
C
5
SC-74A
plastic
SOT753
C79
PIN
SYMBOL
DESCRIPTION
1
D
data input D
2
CP
clock pulse input CP
3
GND
ground (0 V)
4
Q
data output Q
5
V
CC
supply voltage
2002 Jun 06
5
Philips Semiconductors
Product specification
Single D-type flip-flop; positive-edge
trigger
74AHC1G79; 74AHCT1G79
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
SYMBOL
PARAMETER
CONDITIONS
74AHC1G
74AHCT1G
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
V
CC
supply voltage
2.0
5.0
5.5
4.5
5.0
5.5
V
V
I
input voltage
0
-
5.5
0
-
5.5
V
V
O
output voltage
0
-
V
CC
0
-
V
CC
V
T
amb
operating ambient
temperature
see DC and AC
characteristics per device
-
40
+25
+125
-
40
+25
+125
C
t
r
, t
f
(
t/
f)
input rise and fall
times
V
CC
= 3.3
0.3 V
-
-
100
-
-
-
ns/V
V
CC
= 5
0.5 V
-
-
20
-
-
20
ns/V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
supply voltage
-
0.5
+7.0
V
V
I
input voltage
-
0.5
+7.0
V
I
IK
input diode current
V
I
<
-
0.5 V
-
-
20
mA
I
OK
output diode current
V
O
<
-
0.5 or V
O
> V
CC
+ 0.5 V; note 1
-
20
mA
I
O
output source or sink current
-
0.5 V < V
O
< V
CC
+ 0.5 V
-
25
mA
I
CC
V
CC
or GND current
-
75
mA
T
stg
storage temperature
-
65
+150
C
P
D
power dissipation per package
for temperature range from
-
40 to +125
C
-
250
mW
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