2002 Nov 12
2
Philips Semiconductors
Preliminary specification
Single 2-input NAND gate
74AUC1G00
FEATURES
Wide supply voltage range from 0.8 to 2.7 V
Performance optimised for V
CC
= 1.8 V
High noise immunity
Complies with JEDEC standard:
JESD76 (1.65 to 1.95 V)
8 mA output drive (V
CC
= 1.65 V)
CMOS low power consumption
Latch-up performance exceeds 250 mA
ESD protection:
2000 V Human Body Model (A 114-A)
200 V Machine Model (A 115-A)
3.3 V tolerant inputs/outputs
SC-88A and SC-74A package.
DESCRIPTION
The 74AUC1G00 is a high-performance, low-power,
low-voltage, Si-gate CMOS device.
Schmitt-trigger action at all inputs makes the circuit
tolerant for slower input rise and fall time.
This device is fully specified for partial power-down
applications using I
off
. The I
off
circuitry disables the output,
preventing the damaging current backflow through the
device when it is powered down.
The 74AUC1G00 provides the single 2-input NAND
function.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
C; input slewrate
1 V/ns.
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC
2
f
i
+ (C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC
.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
t
PHL
/t
PLH
propagation delay inputs A and B to
output Y
V
CC
= 0.8 V; C
L
= 15 pF; R
L
= 2 k
4.7
ns
V
CC
= 1.2 V; C
L
= 15 pF; R
L
= 2 k
1.8
ns
V
CC
= 1.5 V; C
L
= 15 pF; R
L
= 2 k
1.4
ns
V
CC
= 1.8 V; C
L
= 30 pF; R
L
= 1 k
1.4
ns
V
CC
= 2.5 V; C
L
= 30 pF; R
L
= 500
1.2
ns
C
I
input capacitance
4
pF
C
PD
power dissipation capacitance per buffer
V
CC
= 1.8 V; notes 1 and 2
14
pF
2002 Nov 12
4
Philips Semiconductors
Preliminary specification
Single 2-input NAND gate
74AUC1G00
handbook, halfpage
MNA098
2
4
&
1
Fig.3 IEE/IEC logic symbol.
handbook, halfpage
MNA099
B
A
Y
Fig.4 Logic diagram.
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. When V
CC
=0 (Powered-down mode), the output voltage can be 2.7 V in normal operation.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
supply voltage
0.8
2.7
V
V
I
input voltage
0
2.7
V
V
O
output voltage
active mode
0
V
CC
V
V
CC
= 0 V; Power-down mode
0
2.7
V
T
amb
operating ambient temperature
-
40
+85
C
t
r
,t
f
(
t/
f)
input rise and fall times
0
20
ns/V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
supply voltage
-
0.5
+3.6
V
I
IK
input diode current
V
I
< 0
-
-
50
mA
V
I
input voltage
note 1
-
0.5
+3.6
V
I
OK
output diode current
V
O
> V
CC
or V
O
< 0
-
50
mA
V
O
output voltage
active mode; notes 1 and 2
-
0.5
V
CC
+ 0.5
V
Power-down mode; notes 1 and 2
-
0.5
+3.6
V
I
O
output source or sink current
V
O
= 0 to V
CC
-
60
mA
I
CC
, I
GND
V
CC
or GND current
-
100
mA
T
stg
storage temperature
-
65
+150
C
P
D
power dissipation per package
for temperature range from
-
40 to +85
C
-
250
mW
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