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Электронный компонент: 74HC2G126DC

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DATA SHEET
Product specification
2003 Mar 03
INTEGRATED CIRCUITS
74HC2G126; 74HCT2G126
Dual buffer/line driver; 3-state
2003 Mar 03
2
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
FEATURES
Wide operating voltage from 2.0 to 6.0 V
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
Very small 8 pins package
Output capability: bus driver
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
Specified from
-
40 to +85
C and
-
40 to +125
C.
DESCRIPTION
The 74HC2G/HCT2G126 is a high-speed Si-gate CMOS
device.
The 74HC2G/HCT2G126 provides one non-inverting
buffer/line driver with 3-state output. The 3-state output is
controlled by the output enable input pin (OE). A LOW at
pin OE causes the output as assume a high-impedance
OFF-state.
The bus driver output currents are equal compared to the
74HC/HCT126.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
C; t
r
= r
f
6.0 ns.
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC
2
f
i
N +
(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total switching outputs;
(C
L
V
CC
2
f
o
) = sum of the outputs.
2. For the 74HC2G126 the condition is V
I
= GND to V
CC
.
For the 74HCT2G126 the condition is V
I
= GND to V
CC
-
1.5 V.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
HC2G
HCT2G
t
PHL
/t
PLH
propagation delay nA to nY
C
L
= 15 pF; V
CC
= 5 V
10
12
ns
C
I
input capacitance
1
1
pF
C
O
output capacitance
1.5
1.5
pF
C
PD
power dissipation capacitance
per buffer
output enabled; notes 1 and 2
11
11
pF
output disabled; notes 1 and 2
1
1
pF
2003 Mar 03
3
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level;
X = don't care;
Z = high-impedance OFF-state.
ORDERING INFORMATION
PIN DESCRIPTION
INPUT
OUTPUT
nOE
nA
nY
H
L
L
H
H
H
L
X
Z
TYPE NUMBER
TEMPERATURE
RANGE
PACKAGE
PINS
PACKAGE
MATERIAL
CODE
MARKING
74HC2G126DP
-
40 to +125
C
8
TSSOP8
plastic
SOT505-2
H26
74HCT2G126DP
-
40 to +125
C
8
TSSOP8
plastic
SOT505-2
T26
74HC2G126DC
-
40 to +125
C
8
VSSOP8
plastic
SOT765-1
H26
74HCT2G126DC
-
40 to +125
C
8
VSSOP8
plastic
SOT765-1
T26
PIN
SYMBOL
DESCRIPTION
1
1OE
output enable input
2
1A
data input
3
2Y
data output
4
GND
ground (0 V)
5
2A
data input
6
1Y
data output
7
2OE
output enable input
8
V
CC
supply voltage
2003 Mar 03
4
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
Fig.1 Pin configuration.
handbook, halfpage
MNA945
126
1
2
3
4
1OE
1A
2Y
GND
VCC
2OE
1Y
2A
8
7
6
5
Fig.2 Logic symbol.
handbook, halfpage
MNA946
2A
1A
2OE
1OE
2
1
7
5
1Y
2Y
6
3
Fig.3 Logic symbol (IEEE/IEC).
handbook, halfpage
MNA947
1
EN1
1
6
2
7
3
5
Fig.4 Logic diagram (one driver).
handbook, halfpage
MNA127
OE
A
Y
2003 Mar 03
5
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 110
C the value of P
D
derates linearly with 8 mW/K.
SYMBOL
PARAMETER
CONDITIONS
74HC2G126
74HCT2G126
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
V
CC
supply voltage
2.0
5.0
6.0
4.5
5.0
5.5
V
V
I
input voltage
0
-
V
CC
0
-
V
CC
V
V
O
output voltage
0
-
V
CC
0
-
V
CC
V
T
amb
operating ambient
temperature
see DC and AC
characteristics
per device
-
40
+25
+125
-
40
+25
+125
C
t
r
, t
f
input rise and fall times
V
CC
= 2.0 V
-
-
1000
-
-
-
ns
V
CC
= 4.5 V
-
6.0
500
-
6.0
500
ns
V
CC
= 6.0 V
-
-
400
-
-
-
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
supply voltage
-
0.5
+7.0
V
I
IK
input diode current
V
I
<
-
0.5 V or V
I
> V
CC
+ 0.5 V; note 1
-
20
mA
I
OK
output diode current
V
O
<
-
0.5 V or V
O
> V
CC
+ 0.5 V; note 1
-
20
mA
I
O
output source or sink
current
-
0.5 V < V
O
< V
CC
+ 0.5 V; note 1
-
25
mA
I
CC
, I
GND
V
CC
or GND current
note 1
-
50
mA
T
stg
storage temperature
-
65
+150
C
P
D
power dissipation per
package
for temperature range from
-
40 to +125
C; note 2
-
300
mW