DATA SHEET
Product specification
File under Integrated Circuits, IC06
December 1990
INTEGRATED CIRCUITS
74HC/HCT30
8-input NAND gate
For a complete data sheet, please also download:
The IC06 74HC/HCT/HCU/HCMOS Logic Family Specifications
The IC06 74HC/HCT/HCU/HCMOS Logic Package Information
The IC06 74HC/HCT/HCU/HCMOS Logic Package Outlines
December 1990
2
Philips Semiconductors
Product specification
8-input NAND gate
74HC/HCT30
FEATURES
Output capability: standard
I
CC
category: SSI
GENERAL DESCRIPTION
The 74HC/HCT30 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL).
They are specified in compliance with JEDEC standard no. 7A.
The 74HC/HCT30 provide the 8-input NAND function.
QUICK REFERENEC DATA
GND = 0 V; T
amb
= 25
C; t
r
= t
f
= 6 ns
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W):
P
D
= C
PD
V
CC
2
f
i
+
(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz
f
o
= output frequency in MHz
(C
L
V
CC
2
f
o
) = sum of outputs
C
L
= output load capacitance in pF
V
CC
= supply voltage in V
2. For HC the condition is V
I
= GND to V
CC
For HCT the condition is V
I
= GND to V
CC
-
1.5 V
ORDERING INFORMATION
See
"74HC/HCT/HCU/HCMOS Logic Package Information"
.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
HC
HCT
t
PHL
/ t
PLH
propagation delay A, B, C, D, E, F, G, H to Y
C
L
= 15 pF; V
CC
= 5 V
12
12
ns
C
I
input capacitance
3.5
3.5
pF
C
PD
power dissipation capacitance per gate
notes 1 and 2
15
15
pF
December 1990
3
Philips Semiconductors
Product specification
8-input NAND gate
74HC/HCT30
PIN DESCRIPTION
PIN NO.
SYMBOL
NAME AND FUNCTION
1
A
data input
2
B
data input
3
C
data input
4
D
data input
5
E
data input
6
F
data input
7
GND
ground (0 V)
8
Y
data output
9, 10, 13
n.c.
not connected
11
G
data input
12
H
data input
14
V
CC
positive supply voltage
Fig.1 Pin configuration.
Fig.2 Logic symbol.
Fig.3 IEC logic symbol.
December 1990
4
Philips Semiconductors
Product specification
8-input NAND gate
74HC/HCT30
Fig.4
Functional diagram;
Y = ABCDEFGH.
Fig.5 Logic diagram.
FUNCTION TABLE
Notes
1. H = HIGH voltage level
L = LOW voltage level
X = don't care
INPUTS
OUTPUT
A
B
C
D
E
F
G
H
Y
L
X
X
X
X
L
X
X
X
X
L
X
X
X
X
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
X
X
X
X
L
X
X
X
X
L
X
X
X
X
L
H
H
H
H
H
H
H
H
H
H
H
H
L
December 1990
5
Philips Semiconductors
Product specification
8-input NAND gate
74HC/HCT30
DC CHARACTERISTICS FOR 74 HC
For the DC characteristics see
"74HC/HCT/HCU/HCMOS Logic Family Specifications"
.
Output capability: standard
I
CC
category: SSI
AC CHARACTERISTICS FOR 74HC
GND = 0 V; t
r
= t
f
= 6 ns; C
L
= 50 pF
DC CHARACTERISTICS FOR 74HCT
For the DC characteristics see
"74HC/HCT/HCU/HCMOS Logic Family Specifications"
.
Output capability: standard
I
CC
category: SSI
Note to HCT types
The value of additional quiescent supply current (
I
CC
) for a unit load of 1 is given in the family specifications.
To determine
I
CC
per input, multiply this value by the unit load coefficient shown in the table below.
AC CHARACTERISTICS FOR 74HCT
GND = 0 V; t
r
= t
f
= 6 ns; C
L
= 50 pF
SYMBOL
PARAMETER
T
amb
(
C)
UNIT
TEST CONDITIONS
74HC
V
CC
(V)
WAVEFORMS
+
25
-
40 to
+
85
-
40 to
+
125
min. typ. max. min. max. min.
max.
t
PHL
/ t
PLH
propagation delay
A, B, C, D, E, F, G, H to Y
41
15
12
130
26
22
165
33
28
195
39
33
ns
2.0
4.5
6.0
Fig.6
t
THL
/ t
TLH
output transition time
19
7
6
75
15
13
95
19
16
110
22
19
ns
2.0
4.5
6.0
Fig.6
INPUT
UNIT LOAD COEFFICIENT
A, B, C, D, E, F, G, H
0.60
SYMBOL
PARAMETER
T
amb
(
C)
UNIT
TEST CONDITIONS
74HCT
V
CC
(V)
WAVEFORMS
+
25
-
40 to
+
85
-
40
to
+
125
min. typ. max. min. max. min. max.
t
PHL
/ t
PLH
propagation delay
A, B, C, D, E, F, G, H to Y
16
28
35
42
ns
4.5
Fig.6
t
THL
/ t
TLH
output transition time
7
15
19
22
ns
4.5
Fig.6
December 1990
6
Philips Semiconductors
Product specification
8-input NAND gate
74HC/HCT30
AC WAVEFORMS
PACKAGE OUTLINES
See
"74HC/HCT/HCU/HCMOS Logic Package Outlines"
.
Fig.6
Waveforms showing the input (A, B, C, D, E, F, G, H) to output (Y) propagation delays and the output
transition times.
(1) HC : V
M
= 50%; V
I
= GND to V
CC.
HCT: V
M
= 1.3 V; V
I
= GND to 3 V.
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