2003 Oct 15
2
Philips Semiconductors
Product specification
Buffer with open-drain outputs
74HC3G07; 74HCT3G07
FEATURES
Wide supply voltage range from 2.0 to 6.0 V
High noise immunity
Low power dissipation
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
Multiple package options
Specified from
-
40 to +85
C and
-
40 to +125
C.
DESCRIPTION
The 74HC3G/HCT3G07 is a high-speed Si-gate CMOS
device. Specified in compliance with JEDEC standard
no. 7A.
The 74HC3G/HCT3G07 provides three non-inverting
buffers.
The outputs of the 74HC3G/HCT3G07 devices are open
drains and can be connected to other open-drain outputs
to implement active-LOW, wired-OR or active-HIGH
wired-AND functions. For digital operation this device must
have a pull-up resistor to establish a logic HIGH-level.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
C; t
r
= t
f
6.0 ns.
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC
2
f
i
N +
(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total load switching outputs;
(C
L
V
CC
2
f
o
) = sum of outputs.
2. For 74HC3G07 the condition is V
I
= GND to V
CC
.
For 74HCT3G07 the condition is V
I
= GND to V
CC
-
1.5 V.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
HC3G
HCT3G
t
PZL
propagation delay nA to nY
C
L
= 50 pF; V
CC
= 4.5 V
9
11
ns
t
PLZ
propagation delay nA to nY
C
L
= 50 pF; V
CC
= 4.5 V
11
10
ns
C
I
input capacitance
1.5
1.5
pF
C
PD
power dissipation capacitance
notes 1 and 2
4
4
pF
2003 Oct 15
3
Philips Semiconductors
Product specification
Buffer with open-drain outputs
74HC3G07; 74HCT3G07
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level;
Z = high-impedance OFF-state.
INPUT
OUTPUT
nA
nY
L
L
H
Z
ORDERING INFORMATION
PINNING
TYPE NUMBER
PACKAGES
TEMPERATURE RANGE
PINS
PACKAGE
MATERIAL
CODE
MARKING
74HC3G07DP
-
40 to +125
C
8
TSSOP8
plastic
SOT505-2
H07
74HCT3G07DP
-
40 to +125
C
8
TSSOP8
plastic
SOT505-2
T07
74HC3G07DC
-
40 to +125
C
8
VSSOP8
plastic
SOT765-1
H07
74HCT3G07DC
-
40 to +125
C
8
VSSOP8
plastic
SOT765-1
T07
PIN
SYMBOL
DESCRIPTION
1
1A
data input
2
3Y
data output
3
2A
data input
4
GND
ground (0 V)
5
2Y
data output
6
3A
data input
7
1Y
data output
8
V
CC
supply voltage
2003 Oct 15
5
Philips Semiconductors
Product specification
Buffer with open-drain outputs
74HC3G07; 74HCT3G07
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 110
C the value of P
D
derates linearly with 8 mW/K.
SYMBOL
PARAMETER
CONDITIONS
74HC3G07
74HCT3G07
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
V
CC
supply voltage
2.0
5.0
6.0
4.5
5.0
5.5
V
V
I
input voltage
0
-
6.0
0
-
5.5
V
V
O
output voltage
0
-
V
CC
0
-
V
CC
V
T
amb
operating ambient
temperature
see DC and AC
characteristics per
device
-
40
+25
+125
-
40
+25
+125
C
t
r
, t
f
input rise and fall times
V
CC
= 2.0 V
-
-
1000
-
-
-
ns
V
CC
= 4.5 V
-
6.0
500
-
6.0
500
ns
V
CC
= 6.0 V
-
-
400
-
-
-
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
supply voltage
-
0.5
+7.0
V
I
IK
input diode current
V
I
<
-
0.5 V or V
I
> V
CC
+ 0.5 V
-
20
mA
I
OK
output diode current
V
O
<
-
0.5 V
-
-
20
mA
V
O
output voltage
active mode; note 1
-
0.5
V
CC
+ 0.5
V
high-impedance mode; note 1
-
0.5
7.0
V
I
O
output sink current
-
0.5 V < V
O
< 7.0 V
-
-
25
mA
I
CC
V
CC
or GND current
note 1
-
50
mA
T
stg
storage temperature
-
65
+150
C
P
D
power dissipation
T
amb
=
-
40 to +125
C; note 2
-
300
mW
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