Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- MARKING
- QUICK REFERENCE DATA
- PINNING
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- PACKAGE OUTLINE
- DATA SHEET STATUS
- DEFINITIONS
- DISCLAIMERS
DATA SHEET
Product specification
Supersedes data of 2002 Aug 09
2002 Nov 22
DISCRETE SEMICONDUCTORS
BC817DS
NPN general purpose double
transistor
book, halfpage
M3D302
2002 Nov 22
2
Philips Semiconductors
Product specification
NPN general purpose double transistor
BC817DS
FEATURES
High current (500 mA)
600 mW total power dissipation
Replaces two SOT23 packaged transistors on same
PCB area.
APPLICATIONS
General purpose switching and amplification
Push-pull amplifiers
Multi-phase stepper motor drivers.
DESCRIPTION
NPN transistor pair in a SOT457 (SC-74) plastic package.
MARKING
TYPE NUMBER
MARKING CODE
BC817DS
N3
PINNING
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
handbook, halfpage
1
3
2
4
5
6
Top view
MAM340
1
3
2
TR1
TR2
6
4
5
Fig.1
Simplified outline (SOT457) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
V
CEO
collector-emitter voltage
45
V
I
C
collector current (DC)
500
mA
I
CM
peak collector current
1
A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor unless otherwise specified
V
CBO
collector-base voltage
open emitter
-
50
V
V
CEO
collector-emitter voltage
open base
-
45
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
500
mA
I
CM
peak collector current
-
1
A
I
BM
peak base current
-
200
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
370
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
Per device
P
tot
total power dissipation
T
amb
25
C; note 1
-
600
mW
2002 Nov 22
3
Philips Semiconductors
Product specification
NPN general purpose double transistor
BC817DS
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Notes
1. Pulse test: t
p
300
s;
0.02.
2. V
BE
decreases by approximately
-
2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to
ambient
note 1
208
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor
I
CBO
collector-base cut-off current
V
CB
= 20 V; I
E
= 0
-
-
100
nA
V
CB
= 20 V; I
E
= 0; T
j
= 150
C
-
-
5
A
I
EBO
emitter-base cut-off current
V
EB
= 5 V; I
C
= 0
-
-
100
nA
h
FE
DC current gain
V
CE
= 1 V; I
C
= 100 mA; note 1
160
-
400
V
CE
= 1 V; I
C
= 500 mA; note 1
40
-
-
V
CEsat
collector-emitter saturation voltage I
C
= 500 mA; I
B
= 50 mA; note 1
-
-
700
mV
V
BE
base-emitter voltage
V
CE
= 1 V; I
C
= 500 mA;
notes 1 and 2
-
-
1.2
V
C
c
collector capacitance
V
CB
= 10 V; I
E
= I
e
= 0; f = 1 MHz
-
5
-
pF
f
T
transition frequency
V
CE
= 5 V; I
C
= 10 mA;
f = 100 MHz
100
-
-
MHz
2002 Nov 22
4
Philips Semiconductors
Product specification
NPN general purpose double transistor
BC817DS
handbook, halfpage
0
500
100
200
300
400
MBL747
10
-
1
1
10
10
2
IC (mA)
hFE
10
3
(3)
(1)
(2)
Fig.2
DC current gain as a function of collector
current; typical values.
V
CE
= 1 V.
(1) T
amb
= 150
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
handbook, halfpage
0
10
1000
0
200
400
600
800
2
4
6
8
VCE (V)
IC
(mA)
MBL748
(1) (2) (3) (4) (5)
(6)
(7)
(8)
(9)
(10)
Fig.3
Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= 15 mA.
(2) I
B
= 13.5 mA.
(3) I
B
= 12 mA.
(4) I
B
= 10.5 mA.
(5) I
B
= 9 mA.
(6) I
B
= 7.5 mA.
(7) I
B
= 6 mA.
(8) I
B
= 4.5 mA.
(9) I
B
= 3 mA.
(10) I
B
= 1.5 mA.
handbook, halfpage
10
3
10
2
10
MBL749
10
-
1
1
10
IC (mA)
VCEsat
(mV)
10
2
10
3
(1)
(2)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 10.
(1) T
amb
= 150
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
handbook, halfpage
200
1200
400
600
800
1000
MBL750
10
-
1
1
10
IC (mA)
VBE
(mV)
10
2
10
3
(1)
(2)
(3)
Fig.5
Base-emitter voltage as a function of
collector current; typical values.
V
CE
= 1 V.
(1) T
amb
=
-
55
C.
(2) T
amb
= 25
C.
(3) T
amb
= 150
C.
2002 Nov 22
5
Philips Semiconductors
Product specification
NPN general purpose double transistor
BC817DS
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT457
SC-74
w
B
M
bp
D
e
pin 1
index
A
A1
Lp
Q
detail X
HE
E
v
M
A
A
B
y
0
1
2 mm
scale
c
X
1
3
2
4
5
6
Plastic surface mounted package; 6 leads
SOT457
UNIT
A1
bp
c
D
E
HE
Lp
Q
y
w
v
mm
0.1
0.013
0.40
0.25
3.1
2.7
0.26
0.10
1.7
1.3
e
0.95
3.0
2.5
0.2
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2
0.33
0.23
A
1.1
0.9
97-02-28
01-05-04
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