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Электронный компонент: 74LVC2G241GT

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DATA SHEET
Product specification
Supersedes data of 2004 Sep 22
2005 Feb 02
INTEGRATED CIRCUITS
74LVC2G241
Dual buffer/line driver with 5 V
tolerant inputs/outputs; 3-state
2005 Feb 02
2
Philips Semiconductors
Product specification
Dual buffer/line driver with 5 V
tolerant inputs/outputs; 3-state
74LVC2G241
FEATURES
Wide supply voltage range from 1.65 V to 5.5 V
5 V tolerant input/output for interfacing with 5 V logic
High noise immunity
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8B/JESD36 (2.7 V to 3.6 V).
24 mA output drive (V
CC
= 3.0 V)
CMOS low power consumption
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Inputs accept voltages up to 5 V
Multiple package options
ESD protection:
HBM EIA/JESD22-A114-B exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
Specified from
-
40
C to +85
C and
-
40
C to +125
C.
DESCRIPTION
The 74LVC2G241 is a high-performance, low-power,
low-voltage, Si-gate CMOS device and superior to most
advanced CMOS compatible TTL families.
Inputs can be driven from either 3.3 V or 5 V devices. This
feature allows the use of these devices as translators in a
mixed 3.3 V and 5 V environment.
This device is fully specified for partial power-down
applications using I
off
. The I
off
circuitry disables the output,
preventing the damaging backflow current through the
device when it is powered down.
The 74LVC2G241 is a dual non-inverting buffer/line driver
with 3-state outputs. The 3-state outputs are controlled by
the output enable inputs 1OE and 2OE. A HIGH level at
pin 1OE causes output 1Y to assume a high-impedance
OFF-state. A LOW level at pin 2OE causes output 2Y to
assume a high-impedance OFF-state. Schmitt-trigger
action at all inputs makes the circuit highly tolerant for
slower input rise and fall times.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
C.
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC
2
f
i
N +
(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = number of inputs switching;
(C
L
V
CC
2
f
o
) = sum of outputs.
2. The condition is V
I
= GND to V
CC
.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
t
PHL
/t
PLH
propagation delay inputs nA to output nY V
CC
= 1.8 V; C
L
= 30 pF; R
L
= 1 k
4.5
ns
V
CC
= 2.5 V; C
L
= 30 pF; R
L
= 500
2.8
ns
V
CC
= 2.7 V; C
L
= 50 pF; R
L
= 500
2.8
ns
V
CC
= 3.3 V; C
L
= 50 pF; R
L
= 500
2.6
ns
V
CC
= 5.0 V; C
L
= 50 pF; R
L
= 500
2.1
ns
C
I
input capacitance
2
pF
C
PD
power dissipation capacitance per buffer
output enabled; notes 1 and 2
20
pF
output disabled; notes 1 and 2
5
pF
2005 Feb 02
3
Philips Semiconductors
Product specification
Dual buffer/line driver with 5 V
tolerant inputs/outputs; 3-state
74LVC2G241
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level;
X = don't care;
Z = high-impedance OFF-state.
ORDERING INFORMATION
PINNING
INPUT
OUTPUT
1OE
1A
2OE
2A
1Y
2Y
L
L
H
L
L
L
L
H
H
H
H
H
H
X
L
X
Z
Z
TYPE NUMBER
PACKAGE
TEMPERATURE
RANGE
PINS
PACKAGE
MATERIAL
CODE
MARKING
74LVC2G241DP
-
40
C to +125
C
8
TSSOP8
plastic
SOT505-2
V241
74LVC2G241DC
-
40
C to +125
C
8
VSSOP8
plastic
SOT765-1
V41
74LVC2G241GT
-
40
C to +125
C
8
XSON8
plastic
SOT833-1
V41
SYMBOL
PIN
DESCRIPTION
1OE
1
output enable input (active LOW)
1A
2
data input
2Y
3
data output
GND
4
ground (0 V)
2A
5
data input
1Y
6
data output
2OE
7
output enable input (active HIGH)
V
CC
8
supply voltage
2005 Feb 02
4
Philips Semiconductors
Product specification
Dual buffer/line driver with 5 V
tolerant inputs/outputs; 3-state
74LVC2G241
241
1OE
V
CC
1A
2OE
2Y
1Y
GND
2A
001aab569
1
2
3
4
6
5
8
7
Fig.1 Pin configuration TSSOP8 and VSSOP8.
241
1Y
2OE
V
CC
2A
2Y
1A
1OE
GND
001aab570
3
6
2
7
1
8
4
5
Transparent top view
Fig.2 Pin configuration XSON8.
handbook, halfpage
2A
1A
1
2
7
5
1Y
6
3
2Y
1OE
2OE
MNA729
Fig.3 Logic symbol.
2005 Feb 02
5
Philips Semiconductors
Product specification
Dual buffer/line driver with 5 V
tolerant inputs/outputs; 3-state
74LVC2G241
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. When V
CC
= 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
3. Above 110
C the value of P
tot
derates linearly with 8 mW/K.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
supply voltage
1.65
5.5
V
V
I
input voltage
0
5.5
V
V
O
output voltage
V
CC
= 1.65 V to 5.5 V; enable
mode
0
V
CC
V
V
CC
= 1.65 V to 5.5 V; disable
mode
0
5.5
V
V
CC
= 0 V; Power-down mode
0
5.5
V
T
amb
operating ambient temperature
-
40
+125
C
t
r
, t
f
input rise and fall times
V
CC
= 1.65 V to 2.7 V
0
20
ns/V
V
CC
= 2.7 V to 5.5 V
0
10
ns/V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
supply voltage
-
0.5
+6.5
V
I
IK
input diode current
V
I
< 0 V
-
-
50
mA
V
I
input voltage
note 1
-
0.5
+6.5
V
I
OK
output diode current
V
O
> V
CC
or V
O
< 0 V
-
50
mA
V
O
output voltage
enable mode; notes 1 and 2
-
0.5
V
CC
+ 0.5
V
disable mode; notes 1 and 2
-
0.5
+6.5
V
Power-down mode; notes 1 and 2
-
0.5
+6.5
V
I
O
output source or sink current
V
O
= 0 V to V
CC
-
50
mA
I
CC
, I
GND
V
CC
or GND current
-
100
mA
T
stg
storage temperature
-
65
+150
C
P
tot
power dissipation
T
amb
=
-
40
C to +125
C; note 3
-
300
mW