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Электронный компонент: A1015

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DATA SHEET
Product specification
Supersedes data of 1997 May 01
1999 Apr 08
DISCRETE SEMICONDUCTORS
2PA1015
PNP general purpose transistor
book, halfpage
M3D186
1999 Apr 08
2
Philips Semiconductors
Product specification
PNP general purpose transistor
2PA1015
FEATURES
Low current (max. 150 mA)
Low voltage (max. 50 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a plastic TO-92; SOT54 package.
NPN complement: 2PC1815.
PINNING
PIN
DESCRIPTION
1
base
2
collector
3
emitter
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM285
2
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
50
V
V
CEO
collector-emitter voltage
open base
-
-
50
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
150
mA
I
CM
peak collector current
-
-
200
mA
I
BM
peak base current
-
-
200
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
500
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 08
3
Philips Semiconductors
Product specification
PNP general purpose transistor
2PA1015
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
50 V
-
-
-
100
nA
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
5 V
-
-
-
100
nA
h
FE
DC current gain
I
C
=
-
2 mA; V
CE
=
-
6 V
2PA1015Y
120
-
240
2PA1015GR
200
-
400
h
FE
DC current gain
I
C
=
-
150 mA; V
CE
=
-
6 V
25
-
-
V
CEsat
collector-emitter saturation voltage I
C
=
-
100 mA; I
B
=
-
10 mA
-
-
-
300
mV
V
BEsat
base-emitter saturation voltage
I
C
=
-
100 mA; I
B
=
-
10 mA
-
-
-
1.1
V
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
=
-
10 V; f = 1 MHz
-
4
7
pF
f
T
transition frequency
I
C
=
-
1 mA; V
CB
=
-
10 V; f = 100 MHz 80
-
-
MHz
F
noise figure
I
C
=
-
200
A; V
CE
=
-
5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
-
-
10
dB
1999 Apr 08
4
Philips Semiconductors
Product specification
PNP general purpose transistor
2PA1015
PACKAGE OUTLINE
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1
(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54
TO-92
SC-43
97-02-28
A
L
0
2.5
5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
e1
e
1
2
3
1999 Apr 08
5
Philips Semiconductors
Product specification
PNP general purpose transistor
2PA1015
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.