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Электронный компонент: A220

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DATA SHEET
Product specification
Supersedes data of April 1996
File under Discrete Semiconductors, SC01
1996 Sep 03
DISCRETE SEMICONDUCTORS
BA220
High-speed diode
M3D176
1996 Sep 03
2
Philips Semiconductors
Product specification
High-speed diode
BA220
FEATURES
Hermetically sealed leaded glass
SOD27 (DO-35) package
High switching speed: max. 4 ns
General application
Continuous reverse voltage:
max. 10 V
Repetitive peak reverse voltage:
max. 10 V
Repetitive peak forward current:
max. 400 mA.
APPLICATIONS
High-speed switching.
DESCRIPTION
The BA220 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diode is type branded.
handbook, halfpage
MAM246
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
-
10
V
V
R
continuous reverse voltage
-
10
V
I
F
continuous forward current
see Fig.2; note 1
-
200
mA
I
FRM
repetitive peak forward current
-
400
mA
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
C prior to
surge; see Fig.4
t = 1
s
-
9
A
t = 100
s
-
3
A
t = 1 s
-
1
A
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
350
mW
T
stg
storage temperature
-
65
+200
C
T
j
junction temperature
-
200
C
1996 Sep 03
3
Philips Semiconductors
Product specification
High-speed diode
BA220
ELECTRICAL CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 0.1 mA
460
520
mV
I
F
= 1 mA
560
620
mV
I
F
= 5 mA
640
700
mV
I
F
= 10 mA
680
750
mV
I
F
= 100 mA
825
950
mV
I
R
reverse current
see Fig.5
V
R
= 10 V
-
1.5
A
V
R
= 10 V; T
j
= 150
C
-
50
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
-
2.5
pF
t
rr
reverse recovery time
when switched from I
F
= 10 mA to
I
R
= 60 mA; R
L
= 100
;
measured at I
R
= 1 mA; see Fig.7
-
4
ns
V
fr
forward recovery voltage
when switched from I
F
= 400 mA;
t
r
= 30 ns; see Fig.8
-
2.0
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length 10 mm
240
K/W
R
th j-a
thermal resistance from junction to ambient
lead length 10 mm; note 1
500
K/W
1996 Sep 03
4
Philips Semiconductors
Product specification
High-speed diode
BA220
GRAPHICAL DATA
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
handbook, halfpage
0
100
200
300
200
0
100
MBG451
Tamb (
o
C)
IF
(mA)
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.3
Forward current as a function of forward
voltage.
handbook, halfpage
0
1
2
300
0
100
200
MBG466
VF (V)
IF
(mA)
(1)
(2)
(3)
(1) T
j
= 175
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, full pagewidth
MBG703
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
1996 Sep 03
5
Philips Semiconductors
Product specification
High-speed diode
BA220
Fig.5
Reverse current as a function of junction
temperature.
handbook, halfpage
0
100
Tj (
o
C)
200
10
3
10
2
10
-
1
10
-
2
10
1
IR
(
A)
MGD007
V
R
= 10 V.
Solid line; maximum values.
Dotted line; typical values.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
10
20
30
VR (V)
4
Cd
(pF)
3
1
0
2
MGD002