1996 Sep 03
2
Philips Semiconductors
Product specification
High-speed diodes
BA316; BA317; BA318
FEATURES
Hermetically sealed leaded glass
SOD27 (DO-35) package
High switching speed: max. 4 ns
General application
Continuous reverse voltage: 10 V,
30 V, 50 V
Repetitive peak reverse voltage:
max. 15 V, 40 V, 60 V
Repetitive peak forward current:
max. 225 mA.
APPLICATIONS
High-speed switching.
DESCRIPTION
The BA316, BA317, BA318 are high-speed switching diodes fabricated in
planar technology, and encapsulated in hermetically sealed leaded glass
SOD27 (DO-35) packages.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diodes are type branded.
handbook, halfpage
MAM246
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
-
BA316
-
15
V
BA317
-
40
V
BA318
-
60
V
V
R
continuous reverse voltage
BA316
-
10
V
BA317
-
30
V
BA318
-
50
V
I
F
continuous forward current
see Fig.2; note 1
-
100
mA
I
FRM
repetitive peak forward current
-
225
mA
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
C prior to
surge; see Fig.4
t = 1
s
-
4
A
t = 1 ms
-
1
A
t = 1 s
-
0.5
A
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
350
mW
T
stg
storage temperature
-
65
+200
C
T
j
junction temperature
-
200
C
1996 Sep 03
3
Philips Semiconductors
Product specification
High-speed diodes
BA316; BA317; BA318
ELECTRICAL CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 1 mA
-
700
mV
I
F
= 10 mA
-
850
mV
I
F
= 100 mA
-
1100
mV
I
R
reverse current
see Fig.5
BA316
V
R
= 10 V
-
200
nA
V
R
= 10 V; T
j
= 150
C
-
100
A
BA317
V
R
= 10 V
-
50
nA
V
R
= 30 V
-
200
nA
V
R
= 30 V; T
j
= 150
C
-
100
A
BA318
V
R
= 30 V
-
50
nA
V
R
= 50 V
-
200
nA
V
R
= 50 V; T
j
= 150
C
-
100
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
-
2
pF
t
rr
reverse recovery time
when switched from I
F
= 10 mA to
I
R
= 60 mA; R
L
= 100
;
measured at I
R
= 1 mA; see Fig.7
-
4
ns
V
fr
forward recovery voltage
when switched from I
F
= 50 mA;
t
r
= 20 ns; see Fig.8
-
2.5
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length 10 mm
240
K/W
R
th j-a
thermal resistance from junction to ambient
lead length 10 mm; note 1
500
K/W
1996 Sep 03
4
Philips Semiconductors
Product specification
High-speed diodes
BA316; BA317; BA318
GRAPHICAL DATA
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
handbook, halfpage
0
100
200
200
0
100
MBG452
Tamb (
o
C)
IF
(mA)
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.3
Forward current as a function of forward
voltage.
handbook, halfpage
0
1
2
300
0
100
200
MBG465
VF (V)
IF
(mA)
(1)
(2)
(3)
(1) T
j
= 175
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, full pagewidth
MBG704
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
1996 Sep 03
5
Philips Semiconductors
Product specification
High-speed diodes
BA316; BA317; BA318
Fig.5
Reverse current as a function of junction
temperature.
handbook, halfpage
0
100
Tj (
o
C)
200
10
3
10
2
10
-
1
10
-
2
10
1
IR
(
A)
MGD008
V
R
= V
Rmax
.
Solid line; maximum values.
Dotted line; typical values.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
10
20
1.2
1.0
0.6
0.4
0.8
MGD004
VR (V)
Cd
(pF)
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