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Электронный компонент: BA592

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DATA SHEET
Preliminary specification
File under Discrete Semiconductors, SC01
1998 May 07
DISCRETE SEMICONDUCTORS
BA592
Band-switching diode
k, halfpage
M3D049
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1998 May 07
2
Philips Semiconductors
Preliminary specification
Band-switching diode
BA592
FEATURES
Small plastic SMD package
Low diode capacitance
Low diode forward resistance
Small inductance.
APPLICATIONS
Low loss band-switching in VHF television tuners
Surface mount band-switching circuits.
DESCRIPTION
Planar, high performance band-switch diode in a small
SMD plastic package (SOD323).
PINNING SOD323
PIN
DESCRIPTION
1
cathode
2
anode
ndbook, halfpage
,
1
2
Top view
MAM387
Fig.1 Simplified outline.
Marking code: A2.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS.
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
35
V
I
F
continuous forward current
-
100
mA
P
tot
total power dissipation
T
S
= 90
C
-
500
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
65
+150
C
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1998 May 07
3
Philips Semiconductors
Preliminary specification
Band-switching diode
BA592
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 10 mA
-
-
1
V
I
R
reverse current
V
R
= 20 V
-
-
20
nA
C
d
diode capacitance
V
R
= 1 V; f = 1 MHz; note 1
-
0.92
1.4
pF
V
R
= 3 V; f = 1 MHz; note 1
0.6
0.85
1.1
pF
r
D
diode forward resistance
I
F
= 3 mA; f = 100 MHz; note 1
-
0.45
0.7
I
F
= 10 mA; f = 100 MHz; note 1
-
0.36
0.5
1/g
p
reverse resistance
V
R
= 1 V; f = 100 MHz; note 1
-
100
-
k
L
S
series inductance
-
2
-
nH
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
120
K/W
GRAPHICAL DATA
Fig.2
Forward resistance as a function of
forward current; typical values.
f = 100 MHz; T
j
= 25
C.
0.1
1
10
0.1
1
10
100
I
F
(mA)
r
D
(
)
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
0
0.4
0.8
1.2
1.6
2
0
10
20
30
V
R
(V)
C
d
(pF)
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1998 May 07
4
Philips Semiconductors
Preliminary specification
Band-switching diode
BA592
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD323
97-12-10
0
1
2 mm
scale
SOD323
UNIT
bp
c
D
E
Q
v
mm
0.40
0.25
+
0.05
-
0.05
0.25
0.10
0.2
1.35
1.15
1.8
1.6
A
1.1
0.8
HE
2.7
2.3
0.25
0.15
Lp
0.45
0.15
DIMENSIONS (mm are the original dimensions)
D
1
2
HE
Lp
A
E
bp
A1
Q
Note
1. The marking band indicate the cathode.
A1
max.
Plastic surface mounted package; 2 leads
,
v
M
A
A
c
(1)
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1998 May 07
5
Philips Semiconductors
Preliminary specification
Band-switching diode
BA592
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

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