Document Outline
- FEATURES
- APPLICATION
- DESCRIPTION
- LIMITING VALUES
- ELECTRICAL CHARACTERISTICS
- THERMAL CHARACTERISTICS
- GRAPHICAL DATA
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
Supersedes data of April 1992
1996 Mar 13
DISCRETE SEMICONDUCTORS
BA682; BA683
Band-switching diodes
, halfpage
M3D121
1996 Mar 13
2
Philips Semiconductors
Product specification
Band-switching diodes
BA682; BA683
FEATURES
Continuous reverse voltage:
max. 35 V
Continuous forward current:
max. 100 mA
Low diode capacitance:
max. 1.5 pF
Low diode forward resistance:
max. 0.7 to 1.2
.
APPLICATION
Band-switching in VHF television
tuners.
DESCRIPTION
Planar high performance band-switching diodes in a glass SOD80
SMD package.
Fig.1 Simplified outline (SOD80) and symbol.
handbook, 4 columns
MAM061
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
35
V
I
F
continuous forward current
-
100
mA
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 100 mA; see Fig.2
1.0
V
I
R
reverse current
see Fig.3
V
R
= 20V
50
nA
V
R
= 20 V; T
j
= 75
C
1
A
C
d
diode capacitance
f = 1 MHz; V
R
= 1 V; see Fig.4
1.5
pF
C
d
diode capacitance
f = 1 MHz; V
R
= 3 V; see Fig.4
BA682
1.25
pF
BA683
1.20
pF
r
D
diode forward resistance
I
F
= 3 mA; f = 200 MHz; see Fig.5
BA682
0.7
BA683
1.2
r
D
diode forward resistance
I
F
= 10 mA; f = 200 MHz; see Fig.5
BA682
0.5
BA683
0.9
1996 Mar 13
3
Philips Semiconductors
Product specification
Band-switching diodes
BA682; BA683
THERMAL CHARACTERISTICS
Note
1. Device mounted on a FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
300
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
600
K/W
GRAPHICAL DATA
(1) T
j
= 75
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
Fig.2
Forward current as a function of forward
voltage.
handbook, halfpage
0
1.5
100
0
50
MBG308
0.5
1
I F
(mA)
V (V)
F
(1)
(2)
(3)
V
R
= 20 V.
Solid line: maximum values.
Dotted line: typical values.
Fig.3
Reverse current as a function of
junction temperature.
handbook, halfpage
10
5
10
4
10
3
10
2
10
1
150
0
MBG307
50
100
Tj ( C)
o
I R
(nA)
1996 Mar 13
4
Philips Semiconductors
Product specification
Band-switching diodes
BA682; BA683
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
1.5
0
10
-
1
MBG309
1
10
10
2
0.5
1
Cd
(pF)
VR (V)
BA682
BA683
Fig.5
Diode forward resistance as a function of
forward current; typical values.
f = 200 MHz; T
j
= 25
C.
handbook, halfpage
2
0
10
2
MBG310
10
1
1
rD
(
)
IF (mA)
BA683
BA682
1996 Mar 13
5
Philips Semiconductors
Product specification
Band-switching diodes
BA682; BA683
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.6 SOD80.
Dimensions in mm.
The cathode is indicated by a red band.
handbook, full pagewidth
MBA388 - 2
1.7
1.5
3.7
3.3
0.3
0.3
O
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