Document Outline
- FEATURES
- APPLICATIONS
- GENERAL DESCRIPTION
- PINNING
- LIMITING VALUES
- ELECTRICAL CHARACTERISTICS
- THERMAL CHARACTERISTICS
- GRAPHICAL DATA
- PACKAGE OUTLINE
- DATA SHEET STATUS
- DEFINITIONS
- DISCLAIMERS
DATA SHEET
Product specification
2000 Jul 13
DISCRETE SEMICONDUCTORS
BAP64-05W
Silicon PIN diode
k, halfpage
M3D102
2000 Jul 13
2
Philips Semiconductors
Product specification
Silicon PIN diode
BAP64-05W
FEATURES
High voltage, current controlled
RF resistor for RF attenuators and switches
Low diode capacitance
Low diode forward resistance
Low series inductance
For applications up to 3 GHz.
APPLICATIONS
RF attenuators and switches.
GENERAL DESCRIPTION
Two planar PIN diodes in common cathode configuration
in a SOT323 small SMD plastic package.
PINNING
PIN
DESCRIPTION
1
anode (a1)
2
anode (a2)
3
common cathode
handbook, halfpage
3
2
1
Top view
MAM382
2
1
3
Marking code: 5W-
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
R
continuous reverse voltage
-
100
V
I
F
continuous forward current
-
100
mA
P
tot
total power dissipation
T
s
= 90
C
-
240
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
65
+150
C
2000 Jul 13
3
Philips Semiconductors
Product specification
Silicon PIN diode
BAP64-05W
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
V
F
forward voltage
I
F
= 50 mA
0.95
1.1
V
I
R
reverse current
V
R
= 100 V
-
10
A
V
R
= 20 V
-
1
A
C
d
diode capacitance
V
R
= 0; f = 1 MHz
0.52
-
pF
V
R
= 1 V; f = 1 MHz
0.37
-
pF
V
R
= 20 V; f = 1 MHz
0.23
0.35
pF
r
D
diode forward resistance
I
F
= 0.5 mA; f = 100 MHz; note 1
20
40
I
F
= 1 mA; f = 100 MHz; note 1
10
20
I
F
= 10 mA; f = 100 MHz; note 1
2
3.8
I
F
= 100 mA; f = 100 MHz; note 1
0.7
1.35
L
charge carrier life time
when switched from I
F
= 10 mA to
I
R
= 6 mA; R
L
= 100
; measured at
I
R
= 3 mA
1.55
-
s
L
S
series inductance
1.2
-
nH
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
250
K/W
2000 Jul 13
4
Philips Semiconductors
Product specification
Silicon PIN diode
BAP64-05W
GRAPHICAL DATA
handbook, halfpage
10
2
10
1
10
-
1
MLD365
10
-
1
1
IF (mA)
rD
(
)
10
10
2
Fig.2
Forward resistance as a function of forward
current; typical values.
f = 100 MHz; T
j
= 25
C.
handbook, halfpage
0
20
500
0
100
200
300
400
4
Cd
(fF)
VR (V)
8
12
16
MLD366
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0.5
3
0
-
2.5
s21
2
(dB)
-
2
-
1.5
-
1
-
0.5
1
f (GHz)
(1)
(2)
(3)
(4)
1.5
2
2.5
MLD367
Fig.4
Insertion loss (
|
s
21
|
2
) of the diode as a
function of frequency; typical values.
(1) I
F
= 100 mA.
(2) I
F
= 10 mA.
(3) I
F
= 1 mA.
(4) I
F
= 0.5 mA.
Diode inserted in series with a 50
stripline circuit and
biased via the analyzer Tee network.
T
amb
= 25
C.
handbook, halfpage
0.5
3
0
-
25
s21
2
(dB)
-
20
-
15
-
10
-
5
1
f (GHz)
1.5
2
2.5
MLD368
Fig.5
Isolation (
|
s
21
|
2
) of the diode as a function of
frequency; typical values.
Diode zero biased and inserted in series with a 50
stripline circuit.
T
amb
= 25
C.
2000 Jul 13
5
Philips Semiconductors
Product specification
Silicon PIN diode
BAP64-05W
handbook, halfpage
150
50
0
100
MLD369
10
-
1
1
IP2
(dB)
IF (mA)
10
1800 MHz
900 MHz
Fig.6
Second order intercept point as a function
of forward current; typical values.
T
amb
= 25
C; typical values.
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